According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

A semiconductor package includes a package substrate having a hole pattern including a first through hole extending in a first direction and a second through hole extending in a second direction substantially perpendicular to the first direction, at least one first semiconductor chip disposed on the package substrate to overlap with the first through hole, at least one second semiconductor chip disposed on the package substrate to overlap with the second through hole, first bonding wires passing through the first through hole to electrically connect the at least one first semiconductor chip to the package substrate, and second bonding wires passing through the second through hole to electrically connect the at least one second semiconductor chip to the package substrate.

Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

A display apparatus includes a substrate including a display region and a non-display region, a display element layer, a pad group, a touch electrode layer, and a touch insulating layer. The display element layer includes display elements provided in the display region in a plan view. The pad group may include output pads provided on substrate and provided in the non-display region in the plan view. The touch electrode layer is provided on the display element layer. The touch insulating layer is provided on the display element layer and contacts the touch electrode layer. An intaglio pattern is provided in the touch insulating layer overlapped with the non-display region, and the intaglio pattern is not overlapped with the pad group.

A package comprising a substrate and an integrated device coupled to the substrate through a plurality of pillar interconnects and a plurality of solder interconnects. The plurality of pillar interconnects includes a first pillar interconnect comprising a first cavity. The plurality of solder interconnects comprises a first solder interconnect located in the first cavity of the first pillar interconnect. A planar cross section that extends through the first cavity of the first pillar interconnect may comprise an O shape. The first pillar interconnect comprises a first pillar interconnect portion comprising a first width; and a second pillar interconnect portion comprising a second width that is different than the first width.

An embodiment is a device including an integrated circuit die having an active side and a back side, the back side being opposite the active side, a molding compound encapsulating the integrated circuit die, and a first redistribution structure overlying the integrated circuit die and the molding compound, the first redistribution structure including a first metallization pattern and a first dielectric layer, the first metallization pattern being electrically coupled to the active side of the integrated circuit die, at least a portion of the first metallization pattern forming an inductor.

A semiconductor device includes a plurality of connectors and at least one insulating layer disposed over a semiconductor substrate. A molding layer extends around the plurality of connectors. A sidewall of the molding layer that is closest to a scribe line is offset from the scribe line.

A sintering press for sintering electronic components on a substrate includes at least one reaction element extending along an element axis parallel to a pressing axis of the sintering press between a first element end and a second element end, the first element end forming a support plane for a respective substrate, at least one load cell operatively connected to the second element end, and an element plate slidably supporting the at least one reaction element and equipped with a heating circuit. The reaction element has a heating portion passing through the element plate and transmitting by conduction heat of the element plate to the substrate. The reaction element has a cooling portion ending with the second element end and shaped to dissipate the heat transmitted from the element plate to the heating portion.

A chip package array including a plurality of chip packages is provided. The chip packages are suitable for array arrangement to form the chip package array. Each of the chip packages includes a redistribution structure, a supporting structure, a chip, and an encapsulated material. The supporting structure is disposed on the redistribution structure and has an opening. The chip is disposed on the redistribution structure and located in the opening. The encapsulated material is located between the opening and the chip, wherein the encapsulated material is filled between the opening and the chip, and the chip and the supporting structure are respectively connected to the redistribution structure.

Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.