A semiconductor die stack structure includes a base die, a plurality of semiconductor die stack units, and bumps. Each of the plurality of semiconductor die stack units includes a lower semiconductor die and an upper semiconductor die. Each of the lower semiconductor die and the upper semiconductor die includes a body and a front-side pad structure. The front-side pad structure includes a front-side pad seed layer and a front-side pad pattern. The front-side pad pattern includes a first front-side pad portion, a second front-side pad portion, and a third front-side pad portion. The first front-side pad portion and the second front-side pad portion forms a staircase. The first front-side pad portion and the third front-side pad form a reverse staircase. The first front-side pad portion, the second front-side pad portion, and the third front-side pad include a same metal.

A paste-like adhesive composition of the present invention contains metal particles (A) and a thermally polymerizable compound (B), in which the metal particles (A) form a particle coupling structure by causing sintering through a thermal treatment; when dynamic viscoelasticity of the composition is measured under a condition of a measurement frequency of 1 Hz, within a temperature region of 140 C. to 180 C., the composition has a temperature width of equal to or larger than 10 C. in which a shear modulus of elasticity is equal to or higher than 5,000 Pa and equal to or lower than 100,000 Pa; and an acetone insoluble fraction of a sample, which is obtained by removing the metal particles (A) and then heating the composition under conditions of 180 C. and 2 hours, is equal to or lower than 5% by weight.

A semiconductor package includes a first redistribution structure including a first redistribution layer and a first redistribution bonding pad, the first redistribution bonding pad electrically connected to the first redistribution layer, a first semiconductor chip on the first redistribution structure, and a second redistribution structure on the first semiconductor chip, the second redistribution structure including a second redistribution layer and a second redistribution bonding pad, the second redistribution layer electrically connected to the second redistribution layer. The semiconductor package includes a bonding wire electrically connecting the second redistribution bonding pad and the first redistribution bonding pad to each other, and a molding layer covering at least a portion the first semiconductor chip, the second redistribution structure, and the bonding wire on the first redistribution structure.

Integrated semiconductor assemblies and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device assembly comprises a base substrate having a cavity and a perimeter region at least partially surrounding the cavity. The cavity is defined by sidewalls extending at least partially through the substrate. The assembly further comprises a first die attached to the base substrate at the cavity, and a second die over at least a portion of the first die and attached to the base substrate at the perimeter region. In some embodiments, the first and second dies can be electrically coupled to each other via circuitry of the substrate.

A chip structure including a chip and a redistribution layer is provided. The chip includes a plurality of pads. The redistribution layer includes a dielectric layer and a plurality of conductive traces. The dielectric layer is disposed on the chip and has a plurality of contact windows located above the pads. The conductive traces are located on the dielectric layer and are electrically coupled to the pads through the contact windows. At least one of the conductive traces includes a body and at least one protrusion coupled to the body, and the at least one protrusion is coupled to an area of the body other than where the contact windows are coupled to on the body.

Methods and apparatus are described for adding one or more features (e.g., high bandwidth memory (HBM)) to a qualified stacked silicon interconnect (SSI) technology programmable integrated circuit (IC) region by providing an interface (e.g., an HBM buffer region implemented with a hierarchical switch network) between the added feature device and the programmable IC region. One example apparatus generally includes a programmable IC region and an interface region configured to couple the programmable IC region to at least one fixed feature die via a first plurality of ports associated with the at least one fixed feature die and a second plurality of ports associated with the programmable IC region. The interface region is configured as a switch network between the first plurality of ports and the second plurality of ports, and the switch network includes a plurality of full crossbar switch networks.

A paste-like adhesive composition of the present invention contains metal particles (A) and a thermally polymerizable compound (B), in which the metal particles (A) form a particle coupling structure by causing sintering through a thermal treatment; when dynamic viscoelasticity of the composition is measured under a condition of a measurement frequency of 1 Hz, within a temperature region of 140 C. to 180 C., the composition has a temperature width of equal to or larger than 10 C. in which a shear modulus of elasticity is equal to or higher than 5,000 Pa and equal to or lower than 100,000 Pa; and an acetone insoluble fraction of a sample, which is obtained by removing the metal particles (A) and then heating the composition under conditions of 180 C. and 2 hours, is equal to or lower than 5% by weight.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

A chip structure including a chip and a redistribution layer is provided. The chip includes a plurality of pads. The redistribution layer includes a dielectric layer and a plurality of conductive traces. The dielectric layer is disposed on the chip and has a plurality of contact windows located above the pads. The conductive traces are located on the dielectric layer and are electrically coupled to the pads through the contact windows. At least one of the conductive traces includes a body and at least one protrusion coupled to the body, and the at least one protrusion is coupled to an area of the body other than where the contact windows are coupled to on the body.