A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a first polymer material layer, a second polymer material layer and a first redistribution layer. The encapsulant encapsulates sidewalls of the die. The first polymer material layer is on the encapsulant and the die. The second polymer material layer is on the first polymer material layer. The first redistribution layer is embedded in the first polymer material layer and the second polymer material layer and electrically connected to the die. The first redistribution layer has a top surface substantially coplanar with a top surface of the second polymer material layer, and a portion of a top surface of the first polymer material layer is in contact with the first redistribution layer.

A package module includes a core structure including a frame having a penetrating portion, an electronic component disposed in the penetrating portion, and an insulating material covering at least a portion of each of the frame and the electronic component and filling at least a portion of the penetrating portion. The core structure further has a recessed portion in which a stopper layer is disposed on a bottom surface of the recessed portion. A semiconductor chip has a connection pad and is disposed in the recessed portion such that an inactive surface faces the stopper layer. An encapsulant covers at least a portion of each of the core structure and the semiconductor chip, and fills at least a portion of the recessed portion. An interconnect structure is disposed on the core structure and an active surface of the semiconductor chip, and includes a redistribution layer.

A semiconductor package includes an interposer having multiple connection structures, each including redistribution layers electrically connected to each other, and a passivation layer covering at least a portion of each of the connection structures and filling a space between the connection structures. A first semiconductor chip is disposed on the interposer and has first connection pads, and a second semiconductor chip is disposed adjacent to the first semiconductor chip on the interposer and has second connection pads. The connection structures are independently arranged to each at least partially overlap with one or both of the first and second semiconductor chips, in a stacking direction of the first and second semiconductor chips on the interposer. The redistribution layers of each of the connection structures are electrically connected to at least one of the first and second connection pads via under bump metals.

A semiconductor package includes a semiconductor die encapsulated by an insulating encapsulation, a redistribution circuit structure disposed over the semiconductor die and the insulating encapsulation, the redistribution circuit structure being electrically connected to the semiconductor die; and a conductive feature having a first portion embedded in the redistribution circuit structure and a second portion connected to the first portion, the first portion having a first long axis and a first short axis perpendicular to the long axis in a top view, the second portion disposed over and electrically connected to the first portion. A semiconductor device having the semiconductor package, a circuit substrate and a circuit board is also provided.

Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of the electrode pad portion (2) and having a first opening portion (3a) where the upper surface of the electrode pad portion (2) is exposed, a barrier metal layer (5) formed on the electrode pad portion (2), and a solder bump (6) formed on the barrier metal layer (5). The barrier metal layer (5) is formed such that an outer peripheral end (5b) lies within the first opening portion (3a) of the passivation layer (3) when viewed in plan.

A semiconductor package includes a substrate, through-electrodes penetrating the substrate, first bumps spaced apart from each other in a first direction parallel to a top surface of the substrate and electrically connected to the through-electrodes, respectively, and at least one second bump disposed between the first bumps and electrically insulated from the through-electrodes. The first bumps and the at least one second bump constitute one row in the first direction. A level of a bottom surface of the at least one second bump from the top surface of the substrate is a substantially same as levels of bottom surfaces of the first bumps from the top surface of the substrate.

A semiconductor device includes a wiring substrate provided with a plurality of pads electrically connected to a semiconductor chip in a flip-chip interconnection. The wiring substrate includes a pad forming layer in which a signal pad configured to receive transmission of a first signal and a second pad configured to receive transmission of a second signal different from the first signal are formed and a first wiring layer located at a position closest to the pad forming layer. In the wiring layer, a via land overlapping with the signal pad, a wiring connected to the via land, and a wiring connected to the second pad and extending in an X direction are formed. In a Y direction intersecting the X direction, a width of the via land is larger than a width of the wiring. A wiring is adjacent to the via land and overlaps with the signal pad.

Disclosed herein are inorganic dies with organic interconnect layers and related structures, devices, and methods. In some embodiments, an integrated circuit (IC) structure may include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric.