A bonded assembly includes a first semiconductor die and a second semiconductor die that are bonded to each other by dielectric-to-dielectric bonding. First conductive via structures vertically extend through the second semiconductor die and a respective subset of the first dielectric material layers in the first semiconductor die, and contact a respective first metal interconnect structure in the first semiconductor die. Second conductive via structures vertically extend through a second substrate and a respective subset of the second dielectric material layers in the second semiconductor die, and contacting a respective second metal interconnect structure in the second semiconductor die. Redistribution metal interconnect structures located over a backside surface of the second substrate electrically connect the first conductive via structures and the second conductive via structures, and provide electrical interconnection between the first semiconductor die and the second semiconductor die.

The present disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a connecting element. The connecting element includes a first conductive line segment, a second conductive line segment, and a first connecting line segment. The first conductive line segment is electrically connected to the second conductive line segment through the first connecting line segment. In a vertical projection direction, the first connecting line segment has a first height, the first conductive line segment has a second height, and the first height is different from the second height.

A method of manufacturing a semiconductor package includes forming an insulating layer; forming a seed layer on the insulating layer; forming a photoresist layer on the seed layer; forming a plurality of line pattern holes by patterning the photoresist layer, a horizontal length of a middle portion of each of the plurality of line pattern holes being less than a horizontal length of an upper portion of each of the plurality of line pattern holes and a horizontal length of a lower portion of each of the plurality of line pattern holes; and forming a redistribution line pattern by performing a plating process using a portion of the seed layer exposed by the plurality of line pattern holes.

An electronic package includes a patterned conductive layer and at least one conductive protrusion on the patterned conductive layer. The at least one conductive protrusion has a first top surface. The patterned conductive layer and the at least one conductive protrusion define a space. The electronic package further includes a first electronic component disposed in the space and a plurality of conductive pillars on the first electronic component. The conductive pillars have a second top surface. The first top surface is substantially level with the second top surface.

A method of forming a semiconductor package includes attaching a first package component to a first carrier; attaching a second package component to the first carrier, the second package component laterally displaced from the first package component; attaching a third package component to the first package component, the third package component being electrically connected to the first package component; removing the first carrier from the first package component and the second package component; after removing the first carrier, performing a first circuit probe test on the second package component to obtain first test data of the second package component; and comparing the first test data of the second package component with prior data of the second package component.

An electronic circuit device according to the present invention includes a base substrate including a wiring layer having a connection part, at least one electronic circuit element, and a re-distribution layer including a photosensitive resin layer, the photosensitive resin layer enclosing a surface on which a connection part of the electronic circuit element is formed and a side surface of the electronic circuit element and embedding a first wiring photo via, a second wiring photo via and a wiring, the first wiring photo via directly connected to the connection part of the electronic circuit element, the second wiring photo via arranged at the outer periphery of the electronic circuit element and directly connected to a connection part of the wiring layer, the wiring electrically connected to the first wiring photo via and the second wiring photo via on a same surface.

A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

A semiconductor package includes a first semiconductor chip including a first surface and a second surface, and including a first active layer on a portion adjacent to the first surface; a first redistribution structure on the first surface of the first semiconductor chip, wherein the first redistribution structure includes a first area and a second area next to the first area; a second semiconductor chip mounted in the first area of the first redistribution structure, including a third surface, which faces the first surface, and a fourth surface, and including a second active layer on a portion adjacent to the third surface; a conductive post mounted in the second area of the first redistribution structure; a molding layer at least partially surrounding the second semiconductor chip and the conductive post on the first redistribution structure; and a second redistribution structure disposed on the molding layer and connected to the conductive post.

A semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, and a first encapsulant covering at least a portion of each of the inactive surface and a side surface of the semiconductor chip. A metal layer is disposed on the first encapsulant, and includes a first conductive layer and a second conductive layer, sequentially stacked. A connection structure is disposed on the active surface of the semiconductor chip, and includes a first redistribution layer electrically connected to the connection pad. A lower surface of the first conductive layer is in contact with the first encapsulant and has first surface roughness, and an upper surface of the first conductive layer is in contact with the second conductive layer and has second surface roughness smaller than the first surface roughness.

A semiconductor structure includes a molding, a device in the molding, and a RDL over the device and the molding. The RDL includes a first portion directly over a surface of the molding, and a second portion directly over a surface of the device. A bottom surface of the first portion is in contact with the surface of the molding, and a bottom surface of the second portion is in contact with the surface of the device. The bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other. A thickness of the first portion is greater than a thickness of the second portion.