A wire bonding method comprises: preparing a wire bonding apparatus; a step of forming a free air ball; a first height measuring step of measuring the height of a first electrode by detecting whether the free air ball is grounded to the first electrode; a second height measuring step of measuring the height of a second electrode by detecting whether the free air ball is grounded to the second electrode; a first bonding step of controlling the height of a bonding tool based on the measurement result in the first height measuring step, and bonding the free air ball to the first electrode; and a second bonding step of controlling the height of the bonding tool based on the measurement result in the second height measuring step, and bonding a wire to the second electrode to connect the first and the second electrodes. Thus, electrodes can be correctly bonded.

A wiring structure includes an upper conductive structure, a lower conductive structure and an intermediate layer. The upper conductive structure includes at least one upper dielectric layer and at least one upper circuit layer in contact with the dielectric layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The at least one lower dielectric layer of the lower conductive structure is substantially free of glass fiber. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonds the upper conductive structure and the lower conductive structure together. The upper conductive structure is electrically connected to the lower conductive structure.

A package structure includes at least one electronic device, a protection layer and an encapsulant. The electronic device has a first surface and includes a plurality of bumps disposed adjacent to the first surface thereof. Each of the bumps has a first surface. The protection layer covers the bumps and the first surface of the electronic device, and has a first surface. The encapsulant covers the protection layer and at least a portion of the electronic device, and has a first surface. The first surfaces of the bumps, the first surface of the protection layer and the first surface of the encapsulant are substantially coplanar with each other.

A method of manufacturing a semiconductor package includes manufacturing dies on each of wafers, testing the wafers including the dies, calculating total scores for the wafers according to results of the tests, and setting reference values corresponding to semiconductor products. The method also includes classifying, as the semiconductor product, a selected wafer having a total score corresponding to a selected reference value among the reference values. The method further includes packaging the dies included in the selected wafer.

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 m.

A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core includes: (a) pure silver consisting of silver and further components; or (b) doped silver consisting of silver, at least one doping element, and further components; or (c) a silver alloy consisting of silver, palladium and further components; or (d) a silver alloy consisting of silver, palladium, gold, and further components; or (e) a doped silver alloy consisting of silver, palladium, gold, at least one doping element, and further components, wherein the individual amount of any further component is less than 30 wt.-ppm and the individual amount of any doping element is at least 30 wt.-ppm, and the coating layer is a single-layer of gold or palladium or a double-layer comprised of an inner layer of nickel or palladium and an adjacent outer layer of gold.

The present disclosure relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device capable of preventing occurrence of a flare or a ghost caused by reflection of light in a region other than a light receiving portion of a solid-state imaging element at low cost. The solid-state imaging device includes the solid-state imaging element and a sealing glass which is arranged on the solid-state imaging element and in which a light-shielding resin is embedded in a region corresponding to the region other than the light receiving portion of the solid-state imaging element. The present disclosure is applied to, for example, a solid-state imaging device in which a substrate on which the solid-state imaging element is die-bonded and wire-bonded is packaged, or the like.

Semiconductor assemblies and packages using edge stacking and associated systems and methods are disclosed herein. A semiconductor package may include (1) a base substrate having a base surface, (2) one or more dies attached over the base surface, and (3) a mold material encapsulating the base substrate and the one or more dies. The package may further include connectors on a side surface thereof, wherein the connectors are electrically coupled to the base substrate and/or the one or more dies. The connectors may be further configured to electrically couple the package to one or more neighboring semiconductor packages and/or electrical circuits.

A semiconductor device includes a copper structure over a semiconductor body. In a copper oxide layer on a surface of the copper structure, a content of copper is between 60 at % and 75 at % and a content of oxygen is between 25 at % and 40 at %.

According to one embodiment, a semiconductor device includes: a wiring layer including a first metallic film provided on an oxide film, a second metallic film provided on the first metallic film, and a polysilicon film provided on the second metallic film; and an element layer provided on the wiring layer and including semiconductor elements electrically connected to the first metallic film. Standard Gibbs energy of formation of a first metal included in the first metallic film is lower than that of a second metal included in the second metallic film.