A Pd-coated Cu bonding wire of an embodiment contains Pd of 1.0 to 4.0 mass %, and a S group element of 50 mass ppm or less in total (S of 5.0 to 12.0 mass ppm, Se of 5.0 to 20.0 mass ppm, or Te of 15.0 to 50 mass ppm). At a crystal plane of a cross section of the wire, a <100> orientation ratio is 15% or more, and a <111> orientation ratio is 50% or less. When a free air ball is formed on the wire and a tip portion is analyzed, a Pd-concentrated region is observed on the surface thereof.

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3× or less is 50% or more relative to the total number of measurement points in the coating layer.

The invention relates to an electrical element having at least one functional region and a contact surface, wherein a connecting element is arranged on the contact surface, wherein the connecting element comprises a stranded wire coated with sintered material, wherein the stranded wire is connected, in particular sintered, to the contact surface by a sintered material. Furthermore, the invention relates to a method for producing the electrical element according to the invention.

There is provided a novel Al wiring material that suppresses an increase in cold strength and exhibits a favorable high-temperature reliability. The Al wiring material contains one or more selected from the group consisting of Er, Yb and Gd so as to satisfy 0.001≤x1≤0.6 where x1 is a total content thereof [% by mass], with the balance comprising Al.

The object is to provide a technology for enabling enhancement of the reliability of a semiconductor device. The semiconductor device includes: a semiconductor element; a piece of linear wire connected to an upper surface of the semiconductor element; a coating material in contact with the semiconductor element, and the piece of wire in an upper region on the semiconductor element; and a sealant protecting the semiconductor element, the piece of wire, and the coating material, wherein the coating material contains substances with covalent bonds between oxygen and each of silicon and a metal, a silicon oxide, and siloxane.

An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.

A fan-out stacked semiconductor package structure and a packaging method thereof are disclosed. The structure includes a three-dimensional memory chip package unit and a two-dimensional fan-out peripheral circuit chip SiP package unit. The three-dimensional memory chip package unit includes: at least two memory chips laminated in a stepped configuration; a first rewiring layer; wire bonding structures, each of which being electrically connected to the bonding pad and the first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The two-dimensional fan-out peripheral circuit chip SiP package unit includes: a second rewiring layer; at least one peripheral circuit chip; a third rewiring layer, bonded to the peripheral circuit chip; metal connection pillars; a second encapsulating layer, encapsulating the peripheral circuit chip and the metal connection pillars; and second metal bumps, formed on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer.

An electronic package is provided, in which an electronic component with a conductive layer on an outer surface thereof is embedded in an encapsulant, where at least one electrode pad is disposed on an active surface of the electronic component, and at least one wire electrically connected to the electrode pad is arranged inside the electronic component, so that the conductive layer is electrically connected to the wire, such that the electrode pad, the wire and the conductive layer are used as a power transmission structure which serves as a current path to reduce DC resistance and improve an impedance issue associated with the supply of power.