A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

Systems and methods are provided for producing an integrated circuit package, e.g., an SOIC package, having reduced or eliminated lead delamination caused by epoxy outgassing resulting from the die attach process in which an integrated circuit die is attached to a lead frame by an epoxy. The epoxy outgassing may be reduced by heating the epoxy during or otherwise in association with the die attach process, e.g. using a heating device provided at the die attach unit. Heating the epoxy may achieve additional cross-linking in the epoxy reaction, which may thereby reduce outgassing from the epoxy, which may in turn reduce or eliminate subsequent lead delamination. A heating device located at or near the die attach site may be used to heat the epoxy to a temperature of 55 C.5 C. during or otherwise in association with the die attach process.

An application material container has a fixed portion and a container portion. The fixed portion is configured to be fixable to a fixing member included in an application mechanism. The container portion is provided with, in upper and lower portions thereof, a hole and a hole through which an application needle passes. A side surface of the container portion has a first flange. A lower surface of the first flange is in contact with an upper surface of the fixed portion. A gap is provided between a portion lower than the first flange on the side surface of the container portion and a side surface of the fixed portion. The container portion is horizontally movable within a range of the gap.

A system for applying materials to components generally includes a tool operable for transferring a portion of a material from a supply of the material to a component. The tool may include a resilient material configured for tamping the portion of the material onto the component and/or for imprinting the portion of the material for release and transfer from the supply.

An object of the present invention is to provide a semiconductor device in which peeling between a mold resin and a substrate is suppressed. A semiconductor device 1 includes a semiconductor chip 20 and a substrate 10 that are molded with a mold resin layer 40. The semiconductor device 1 includes a resin layer 50 having a thickness of 200 nm or less different from the mold resin layer 40 between the cured mold resin layer 40 and the substrate 10. The resin layer 50 present between the mold resin layer 40 and the substrate 10 is preferably present on a periphery of 30% or more of the chip when an entire peripheral length of the chip is 100%.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

A lid attach process includes providing a substrate and a die attached to the substrate, providing a lid and dipping a periphery of the lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid, and positioning the lid over the die and placing the lid on a top of the substrate with the adhesive material being adapted to interface with a periphery of the substrate.

To provide a heat-dissipating resin composition, and cured product thereof, which can effectively transmit heat generated from a heat-generating part such as a semiconductor element or the like with a high heating value to an object such as a substrate, heat sink, shield can lid, housing, or the like, and reduce defects such as contact failure of a relay or connector, or the like. A heat-dissipating resin composition of an embodiment of the present disclosure includes: component (A): epoxy resin; component (B): curing agent for epoxy resin; component (C): (meth)acrylic oligomer with weight average molecular weight of 10,000 or less; and component (D): heat conductive particles.

A method is provided to fabricate a high-power module. A non-touching needle is used to paste a slurry on a heat-dissipation substrate. The slurry comprises nano-silver particles and micron silver particles. The ratio of the two silver particles is 9:11:1. The slurry is pasted on the substrate to be heated up to a temperature kept holding. An integrated chip (IC) is put above the substrate to form a combined piece. A hot presser processes thermocompression to the combined piece to form a thermal-interface-material (TIM) layer with the IC and the substrate. After heat treatment, the TIM contains more than 99 percent of pure silver with only a small amount of organic matter. No volatile organic compounds would be generated after a long term of use. No intermetallic compounds would be generated while the stability under high temperature is obtained. Consequently, embrittlement owing to procedure temperature is dismissed.

Various embodiments include a solder preform for establishing a diffusion solder connection comprising: a microstructure including a solder material and a metallic material; a first joining surface for a first joining partner and a second joining surface for a second joining partner; and a diffusion zone comprising an intermetallic compound of at least some of the solder material and at least some of the metallic material. The first joining surface and the second joining surface include at least some solder material.