A method of manufacturing semiconductor devices, such as integrated circuits includes arranging one or more semiconductor dice on a support surface. Laser direct structuring material is molded onto the support surface having the semiconductor die/dice arranged thereon. Laser beam processing is performed on the laser direct structuring material molded onto the support surface having the semiconductor die/dice arranged thereon to provide electrically conductive formations for the semiconductor die/dice arranged on the support surface. The semiconductor die/dice provided with the electrically-conductive formations are separated from the support surface.

A surface mount electronic device providing an electrical connection between an integrated circuit (IC) and a printed circuit board (PCB) is provided and includes a die and a dielectric material formed to cover portions of the die. Pillar contacts are electrically coupled to electronic components in the die and the pillar contacts extend from the die beyond an outer surface of the die. A conductive ink is printed on portions of a contact surface of the electronic device package and forms electrical terminations on portions of the dielectric material and electrical connector elements that connect an exposed end surface of the pillar contacts to the electrical terminations.

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

A method of making a semiconductor device may include providing a large semiconductor die comprising conductive interconnects with a first encapsulant disposed over four side surfaces of the large semiconductor die, over the active surface of the large semiconductor die, and around the conductive interconnects. A first build-up interconnect structure may be formed over the large semiconductor die and over the first encapsulant. Vertical conductive interconnects may be formed over the first build-up interconnect structure and around an embedded device mount site. An embedded device comprising through silicon vias (TSVs) may be disposed over the embedded device mount site. A second encapsulant may be disposed over the build-up structure, and around at least five sides of the embedded device. A second build-up structure may be formed disposed over the planar surface and configured to be electrically coupled to the TSVs of the embedded device and the vertical conductive interconnects.

A semiconductor package may include a redistribution substrate including first and second surfaces opposite each other, a first semiconductor chip on the first surface, a first molding portion on a side surface of the first semiconductor chip, a second semiconductor chip between the first semiconductor chip and the redistribution substrate, a second molding portion between the redistribution substrate and the first molding portion and on a side surface of the second semiconductor chip, bump patterns between the second semiconductor chip and the redistribution substrate, and a mold via penetrating the second molding portion and electrically connecting the first semiconductor chip to the redistribution substrate. The redistribution substrate may include first and second redistribution patterns sequentially in an insulating layer. The mold via may contact the second redistribution pattern, and the bump patterns may contact the first redistribution pattern.

A light emitting device and a manufacturing method thereof are provided. The light emitting device includes a light emitting unit, a fluorescent layer, a reflective layer, and a light-absorbing layer. The light emitting unit has a top surface, a bottom surface opposite to the top surface, and a side surface located between the top surface and the bottom surface. The light emitting unit includes an electrode disposed at the bottom surface. The fluorescent layer is disposed on the top surface of the light emitting unit. The reflective layer covers the side surface of the light emitting unit. The light-absorbing layer covers the reflective layer, so that the reflective layer is located between the side surface of the light emitting unit and the light-absorbing layer.

A fingerprint sensor package, including a sensing side for sensing fingerprint information and a separate connection side for electrically connecting the fingerprint sensor package to a host device, is disclosed. The fingerprint sensor package can also include a sensor integrated circuit facing the sensing side and substantially surrounded by a fill material. The fill material includes vias at peripheral locations around the sensor integrated circuit. The fingerprint sensor package can further include a redistribution layer on the sensing side which redistributes connections of the sensor integrated circuit to the vias. The connections can further be directed through the vias to a ball grid array on the connection side. Some aspects also include electrostatic discharge traces positioned at least partially around a perimeter of the connection side. Methods of manufacturing are also disclosed.

A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component embedded in an insulating material on the surface of the package substrate and including a TSV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the insulating material including a second conductive pathway electrically coupled to the TSV; and a second microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TSV, the second microelectronic component, and the first microelectronic component.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.