A photosensitive detecting device capable of simultaneously detecting spectra of different wavelengths comprises a first photosensitive chip (3) covered by a first spectral filtering layer (2), the first spectral filtering layer (2) allowing a light with a wavelength in a first range to pass through in response to a reception from the first photosensitive chip (3), and a second photosensitive chip (6) covered by a second spectral filtering layer (5), the second spectral filtering layer (5) allowing a light with a wavelength in a second range to pass through in response to a reception from the second photosensitive chip (6). The photosensitive detecting device has an advantage of simultaneously detecting various spectra of different wavelengths by one independent device.

The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

An imaging apparatus includes: a substrate; and a plurality of device sections each including a photoelectric converter and disposed on the substrate to be spaced from one another and to collectively form a concave shape.

An exemplary micro-device and substrate structure includes a destination substrate and one or more contact pads disposed thereon, a micro-device disposed on or over the destination substrate, and a layer of cured adhesive disposed on the destination substrate. The micro-device comprises at least one electrical contact. The at least one electrical contact is in direct electrical contact with the one or more contact pads. The adhesive layer adheres the micro-device to the destination substrate and is in contact with the one or more contact pads. An exemplary method of making a micro-device and substrate structure includes providing a destination substrate and one or more contact pads disposed thereon, coating a layer of curable adhesive, disposing a micro-device comprising at least one electrical contact on the layer and curing the layer thereby directly electrically contacting the at least one electrical contact with the one or more contact pads.

A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

An example device in accordance with an aspect of the present disclosure includes an avalanche photodetector to enable carrier multiplication for increased responsivity, and a receiver based on source-synchronous CMOS and including adaptive equalization. The photodetector and receiver are monolithically integrated on a single chip.

An integrated optical sensor module includes an optical sensor die having an optical sensing area on its first surface, and an application-specific integrated circuit (ASIC) die arranged over the first surface of the optical sensor die. A hole in the ASIC die is at least partially aligned with the optical sensing area such that at least some of the light passing through the hole may contact the optical sensing area. The hole through the ASIC die can be configured to receive an optical fiber, lens structure, or other optical element therein.

A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

A cavity-down pressure sensor device has a pressure-sensing die that is electrically connected to a master control unit (MCU) using face-to-face bonding. Connecting the pressure-sensing die in this manner avoids the need to wire bond the pressure-sensing die to the master control unit.