The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

A method for manufacturing a stack structure comprises: providing a lead frame having a metal frame, at least two metal plate portions and a plurality of connection ribs, the connection ribs each comprises a first end, a second end and a connection portion; directly mounting electronic components for constructing two modules on the metal plate portions; packaging the electronic components of the first module, the first ends of the metal connection components which are electrically connected to the first module and the first ends of the part of the connection ribs which are electrically connected to the first module are packaged therein; removing the metal frame and part or whole of the connection ribs, the remaining connection ribs forms pins; and bending the metal connection component so that the two modules connected by the metal connection components are stacked one upon the other, to form the stack structure.

A method for manufacturing a stack structure comprises: providing a lead frame having a metal frame, at least two metal plate portions and a plurality of connection ribs, the connection ribs each comprises a first end, a second end and a connection portion; directly mounting electronic components for constructing two modules on the metal plate portions; packaging the electronic components of the first module, the first ends of the metal connection components which are electrically connected to the first module and the first ends of the part of the connection ribs which are electrically connected to the first module are packaged therein; removing the metal frame and part or whole of the connection ribs, the remaining connection ribs forms pins; and bending the metal connection component so that the two modules connected by the metal connection components are stacked one upon the other, to form the stack structure.

The present disclosure relates to a component structure, a power module and a power module assembly structure having the component structure. The component structure comprises: a first bus bar, having one end extending to a first plane to form a first connecting terminal; a second bus bar, comprising a front portion of the second bus bar and a rear portion of the second bus bar, wherein the front portion of the second bus bar is laminated in parallel with the first bus bar, and the rear portion of the second bus bar is extended to a second plane to form a second connecting terminal; and an external circuit comprising a third bus bar, wherein the third bus bar is settled in parallel with the rear portion of the second bus bar, to reduce a parasitic inductance between the first connecting terminal and the second connecting terminal.

A light emitting diode (LED) stack for a display including a first LED sub-unit configured to emit a first colored light, a second LED sub-unit disposed on the first LED sub-unit and configured to emit a second colored light, and a third LED sub-unit disposed on at least one of the first LED sub-unit and the second LED sub-unit and configured to emit a third colored light, in which the first LED sub-unit is configured to emit light through the second LED sub-unit and the third LED sub-unit, and the second LED sub-unit is configured to emit light through the third LED sub-unit.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

A power semiconductor module includes a plurality of semiconductor switches arranged in a plurality of groups. Each semiconductor switch has a first terminal and a second terminal having a controlled path therebetween and a control terminal. A plurality of first group contacts are each connected to the first terminals of the semiconductor switches of a respective group and a plurality of second group contacts are each connected to the second terminals of the semiconductor switches of the respective group. A plurality of control group contacts are each connected to the control terminals of the semiconductor switches of the respective group. An interconnection bridge connects the control group contacts and the first group contacts of the plurality of groups. The interconnection bridge has a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.

Provided is a clip structure for a semiconductor package comprising: a first bonding unit bonded to a terminal part of an upper surface or a lower surface of a semiconductor device by using a conductive adhesive interposed therebetween, a main connecting unit which is extended and bent from the first bonding unit, a second bonding unit having an upper surface higher than the upper surface of the first bonding unit, an elastic unit elastically connected between the main connecting unit and one end of the second bonding unit, and a supporting unit bent and extended from the other end of the second bonding unit toward the main connecting unit, wherein the supporting unit is formed to incline at an angle of 1° through 179° from an extended surface of the main connecting unit and has an elastic structure so that push-stress applying to the semiconductor device while molding may be dispersed.

A semiconductor device includes a first die embedded in a molding material, where contact pads of the first die are proximate a first side of the molding material. The semiconductor device further includes a redistribution structure over the first side of the molding material, a first metal coating along sidewalls of the first die and between the first die and the molding material, and a second metal coating along sidewalls of the molding material and on a second side of the molding material opposing the first side.