H01L25/075

Fabric-based items with electrical component arrays

A fabric-based item may include fabric layers and other layers of material. An array of electrical components may be mounted in the fabric-based item. The electrical components may be mounted to a support structure such as a flexible printed circuit. The flexible printed circuit may have a mesh shape formed from an array of openings. Serpentine flexible printed circuit segments may extend between the openings. The electrical components may be light-emitting diodes or other electrical devices. Polymer with light-scattering particles or other materials may cover the electrical components. The flexible printed circuit may be laminated between fabric layers or other layers of material in the fabric-based item.

Slicing micro-LED wafer and slicing micro-LED chip

A slicing micro-light emitting diode (LED) wafer includes a driver circuit substrate, a plurality of micro-LEDs formed on the driver circuit substrate, the plurality of micro-LEDs being made from a plurality of epitaxial layer slices arranged side-by-side on the driver circuit substrate, and a bonding layer, formed at bottoms of the plurality of epitaxial layer slices and on a top surface of the driver circuit substrate, for bonding the micro-LEDs and the driver circuit substrate.

Light emitting diode module

A light emitting diode (LED) module includes an integrated substrate, the integrated substrate including a plurality of LEDs; a glass substrate; and a signal wiring layer provided on the glass substrate. The signal wiring layer includes a plurality of signal electrodes configured to supply a data signal to the plurality of LEDs. The LED module further includes a conductive pattern provided on at least one surface of the integrated substrate, and connected to a ground.

Display device and method of fabricating the same

A display device includes a substrate including a display area and a non-display area, and a first surface and a second surface; pixels disposed on the first surface; a signal line disposed on the first surface, and electrically connected to each pixel; a cushion layer disposed on the pixels and the signal line, and including at least one contact hole that exposes a portion of the signal line; a connector disposed in the at least one contact hole and electrically connected to the signal line; and a driver disposed on the cushion layer and electrically connected to the pixels through the connector. Each pixel includes a display element layer disposed on the first surface and including at least one light emitting element, and a pixel circuit layer disposed on the display element layer and including at least one transistor electrically connected to the at least one light emitting element.

LIGHT-EMITTING DIODE (LED), LED PACKAGE AND APPARATUS INCLUDING THE SAME

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Light-emitting device, manufacturing method thereof and display module using the same

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

SOLID STATE LIGHT FIXTURES SUITABLE FOR HIGH TEMPERATURE OPERATION HAVING SEPARATE BLUE-SHIFTED-YELLOW/GREEN AND BLUE-SHIFTED-RED EMITTERS

Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Display substrate, on-board display device and method for manufacturing the display substrate

A display substrate is provided, which includes a base substrate, a plurality of pixel units arranged on the base substrate, and a function layer arranged at a light-emitting side of at least one pixel unit of the plurality of pixel units, wherein the function layer is configured to shield a light beam toward a first direction among light beams emitted by the at least one pixel unit, the function layer includes an organic layer and a light-shielding layer, and the light-shielding layer is arranged on a part of the organic layer, and configured to shield the light beam toward the first direction among the light beams emitted by the at least one pixel unit. An on-board display device and a method for manufacturing the display substrate are further provided.

Light emitting diode containing oxidized metal contacts

A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.

MOLDED LED PACKAGE WITH LAMINATED LEADFRAME AND METHOD OF MAKING THEREOF
20180012872 · 2018-01-11 ·

A method of packaging light emitting diodes (LEDs) includes molding a lead frame containing a plurality of lead frame fingers that are parallel to each other such that the lead frame fingers are separated from each other by a molded insulating structure to form a molded lead frame, mounting light emitting diodes to at least a portion of the molded lead frame, and dicing the molded lead frame to form a plurality of lead-containing mounting structures. Each of the lead-containing mounting structure includes a respective plurality of leads that are remaining portions of the lead frame, and each of the plurality of leads contains at least one castellation.