A semiconductor package includes a redistribution substrate including a first redistribution layer, a first molding member on the redistribution substrate, a second redistribution layer on an upper surface of the first molding member and having a redistribution pad, an electrical connection pad on an upper surface of a second molding member and electrically connected to the second redistribution layer, and a passivation layer on the second molding member and having an opening exposing at least a portion of the electrical connection pad. The electrical connection pad includes a conductor layer, including a first metal, and a contact layer on the conductor layer and including a second metal. The redistribution pad includes a third metal, different from the first metal and the second metal. The portion of the electrical connection pad, exposed by the opening, has a width greater than a width of the redistribution pad.

An apparatus for a common cooling solution for multiple packages of a common height, including: a first die package; a second die package having a same height as the first die package; and a cooling element thermally coupled to the first die package and the second die package by a planar surface of the cooling element.

A package comprising a substrate, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, a first bridge and a second bridge. The first bridge is coupled to the first integrated device and the second integrated device. The first bridge is configured to provide at least one first electrical path between the first integrated device and the second integrated device. The first bridge is coupled to a top portion of the first integrated device and a top portion of the second integrated device. The second bridge is coupled to the first integrated device and the second integrated device. The second bridge is configured to provide at least one second electrical path between the first integrated device and the second integrated device.

A device includes a substrate, a dielectric layer over the substrate, and a conductive interconnect in the dielectric layer. The conductive interconnect includes a barrier/adhesion layer and a conductive layer over the barrier/adhesion layer. The barrier/adhesion layer includes a material having a chemical formula MX.sub.n, with M being a transition metal element, X being a chalcogen element, and n being between 0.5 and 2.

Various disclosed embodiments include a substrate, a first interposer coupled to the substrate and to a first semiconductor device die, and a second interposer coupled to the substrate and to a second semiconductor device die. The first semiconductor device die may be a serializer/de-serializer die and the first semiconductor device die coupled to the first interposer may be located proximate to a sidewall of the substrate. In certain embodiments, the second semiconductor device die may be a system-on-chip die. In further embodiments, the second interposer may also be coupled to high bandwidth memory die. Placing a serializer/de-serializer die proximate to a sidewall of a substrate allows a length of electrical pathways to be reduced, thus reducing impedance and RC delay. The use of smaller, separate, interposers also reduces complexity of fabrication of interposers and similarly lowers impedance associated with redistribution interconnect structures associated with the interposers.

A semiconductor package includes a semiconductor chip on a substrate. The semiconductor chip includes an active region, and a scribe lane in continuity with an edge of the active region. A non-conductive film (NCF) is between the substrate and the semiconductor chip, the non-conductive film (NCF) at least partially defines a recess region overlapping with the scribe lane in plan view and extending on the active region.

A semiconductor package including a redistribution substrate extending in a first direction and a second direction perpendicular to the first direction, a semiconductor chip mounted on a top surface of the redistribution substrate, and an outer terminal on a bottom surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern, a redistribution insulating layer covering a top surface and a side surface of the under-bump pattern, a protection pattern interposed between the top surface of the under-bump pattern and the redistribution insulating layer, and interposed between the side surface of the under-bump pattern and the redistribution insulating layer, and a redistribution pattern on the under-bump pattern. The outer terminal may be disposed on a bottom surface of the under-bump pattern.

Disclosed are semiconductor packages and their fabricating methods. A semiconductor package includes a semiconductor chip on a redistribution substrate. The redistribution substrate includes a base dielectric layer and upper coupling pads in the base dielectric layer. Top surfaces of the upper coupling pads are coplanar with a top surface of the base dielectric layer. The semiconductor chip includes a redistribution dielectric layer and redistribution chip pads in the redistribution dielectric layer. Top surfaces of the redistribution chip pads are coplanar with a top surface of the redistribution dielectric layer. The top surface of the redistribution dielectric layer is bonded to the top surface of the base dielectric layer. The redistribution chip pads are bonded to the upper coupling pads. The redistribution chip pads and the upper coupling pads include a same metallic material. The redistribution dielectric layer and the base dielectric layer include a photosensitive polymer layer.

Disclosed are semiconductor packages and their fabricating methods. The method includes preparing a semiconductor chip with a pillar pattern on a bottom surface thereof, placing the semiconductor chip side by side with a connection substrate with a conductive pad on a bottom surface thereof, forming a molding layer on the bottom surfaces of the connection substrate and the semiconductor chip to cover the pillar pattern and the conductive pad, forming a first redistribution substrate on top surfaces of the connection substrate, the semiconductor chip, and the molding layer and directly in physical contact with the top surface of the semiconductor chip, and performing a grinding process on a bottom surface of the molding layer to expose the pillar pattern and the conductive pad. An outer sidewall of the connection substrate is vertically aligned with that of the first redistribution substrate.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, and a die, electrically coupled to the package substrate, including a silicon substrate having a first surface and an opposing second surface; a device layer at the first surface of the silicon substrate; and a dielectric layer, having a heater trace, at the second surface of the silicon substrate.