A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.

Disclosed herein is a method that includes epitaxially growing SiGe layer on a silicon substrate, etching the SiGe layer and the silicon substrate to form an active region covered with the SiGe layer, first etching the SiGe layer formed on a first region of the active region without etching the SiGe layer formed on a second region of the active region to form a first trench, and second etching the SiGe layer remaining on an inner wall of the first trench.

A device includes a substrate. A channel region of a transistor overlies the substrate and a source/drain region is in contact with the channel region. The source/drain region is adjacent to the channel region along a first direction. A source/drain contact is disposed on the source/drain region. A gate electrode is disposed on the channel region and a gate contact is disposed on the gate electrode. A first low-k dielectric layer is disposed between the gate contact and the source/drain contact along the first direction.

The present disclosure provides a semiconductor device with void-free contacts and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure disposed over a semiconductor substrate, a dielectric layer disposed over the source/drain structure, and a conductive contact penetrating through the dielectric layer and the source/drain structure, wherein the conductive contact comprises a conductive layer and a barrier layer covering a sidewall and a bottom surface of the conductive layer. A first thickness of the harrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the bottom surface of the conductive layer.

The present disclosure provides a semiconductor device with void-free contacts and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure disposed over a semiconductor substrate, a dielectric layer disposed over the source/drain structure, and a conductive contact penetrating through the dielectric layer and the source/drain structure, wherein the conductive contact comprises a conductive layer and a barrier layer covering a sidewall and a bottom surface of the conductive layer. A first thickness of the harrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the bottom surface of the conductive layer.

An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO.sub.3(ZnO).sub.m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO.sub.3(ZnO).sub.m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The source/drain region includes epitaxial end caps, where each epitaxial end cap is formed at an end portion of a nanostructure of the nanostructures. The source/drain region also includes an epitaxial body in contact with the epitaxial end caps and an epitaxial top cap formed on the epitaxial body. The semiconductor device further includes gate structure formed on the nanostructures.

The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The source/drain region includes epitaxial end caps, where each epitaxial end cap is formed at an end portion of a nanostructure of the nanostructures. The source/drain region also includes an epitaxial body in contact with the epitaxial end caps and an epitaxial top cap formed on the epitaxial body. The semiconductor device further includes gate structure formed on the nanostructures.

An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.