In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm.sup.2 and lower than or equal to 0.5 W/cm.sup.2 is supplied to an electrode provided in the treatment chamber.

A method for forming an electrical contact is provided. The method includes grinding a silicon carbide surface using a grinding disk which includes a grinding face containing nickel or a nickel compound, such that particles of the nickel or nickel compound from the grinding disk are embedded in the ground silicon carbide surface, and hardening the ground silicon carbide surface with the aid of a laser, such that at least some of the embedded nickel particles form a nickel silicide with silicon from the silicon carbide.

A method for forming an electrical contact is provided. The method includes grinding a silicon carbide surface using a grinding disk which includes a grinding face containing nickel or a nickel compound, such that particles of the nickel or nickel compound from the grinding disk are embedded in the ground silicon carbide surface, and hardening the ground silicon carbide surface with the aid of a laser, such that at least some of the embedded nickel particles form a nickel silicide with silicon from the silicon carbide.

A semiconductor substrate (1) includes a front surface and a back surface opposite to each other, and a through-hole (9) penetrating from the back surface to the front surface. A metal film (10) surrounding the through-hole (9) is formed in a ring shape on the front surface. A front-surface electrode (6) includes a wiring electrode (11,12) covering the through-hole (9) and the metal film (10) and is joined to the front surface outside the metal film (10). A back-surface electrode (15) is formed on the back surface and inside the through-hole (9) and connected to the wiring electrode (11,12). The metal film (10) has a lower ionization tendency and a higher work function than the wiring electrode (11,12).

A semiconductor device may include a substrate including first and second active regions, which are adjacent to each other, first and second active patterns provided on the first and second active regions, respectively, and a gate electrode extended to cross the first and second active patterns. The gate electrode may include first and second electrode portions provided on the first and second active regions, respectively. The second electrode portion may include a first metal pattern, an etch barrier pattern, a second metal pattern, and a third metal pattern sequentially covering the second active pattern. The first electrode portion may include a second metal pattern covering the first active pattern. The etch barrier pattern may be in contact with the first metal pattern and the second metal pattern, and the etch barrier pattern may be thinner than the first metal pattern and thinner than the second metal pattern.

A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with the semiconductor substrate. The at least one interface region includes a first portion of the semiconductor substrate, a first portion of the metal nitride layer, and an interface between the first portion of the semiconductor substrate and the first portion of the metal nitride layer. A concentration of nitrogen content at the first portion of the metal nitride layer is higher than a concentration of nitrogen content at a second portion, of the metal nitride layer, outside the interface region. A distribution of nitrogen content throughout the metal nitride layer may have a maximum concentration at the first portion of the metal nitride layer. Alternatively and/or additionally, a method for producing such a semiconductor device is provided herein.

A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with the semiconductor substrate. The at least one interface region includes a first portion of the semiconductor substrate, a first portion of the metal nitride layer, and an interface between the first portion of the semiconductor substrate and the first portion of the metal nitride layer. A concentration of nitrogen content at the first portion of the metal nitride layer is higher than a concentration of nitrogen content at a second portion, of the metal nitride layer, outside the interface region. A distribution of nitrogen content throughout the metal nitride layer may have a maximum concentration at the first portion of the metal nitride layer. Alternatively and/or additionally, a method for producing such a semiconductor device is provided herein.

A display device is disclosed. In one aspect, the device includes a substrate and a display unit disposed on the substrate and including a plurality of pixels each pixel including a thin film transistor, a display element electrically connected to the thin film transistor, and a planarization layer interposed between the thin film transistor and the display element. The display unit includes a display region and a non-display region surrounding the display region, wherein the non-display region includes a voltage line. The planarization layer comprises a central portion, an outer portion and a dividing region interposed between the central and outer portions, wherein the dividing region is located in the non-display region. The planarization layer covers at least a lateral side of the voltage line formed in the dividing region.

A display device is disclosed. In one aspect, the device includes a substrate and a display unit disposed on the substrate and including a plurality of pixels each pixel including a thin film transistor, a display element electrically connected to the thin film transistor, and a planarization layer interposed between the thin film transistor and the display element. The display unit includes a display region and a non-display region surrounding the display region, wherein the non-display region includes a voltage line. The planarization layer comprises a central portion, an outer portion and a dividing region interposed between the central and outer portions, wherein the dividing region is located in the non-display region. The planarization layer covers at least a lateral side of the voltage line formed in the dividing region.

A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.