Patent classifications
H01L31/02005
POWER SYSTEM BASED ON BETA SOURCE AND METHOD FOR OPERATING THE SAME
Provided herein are a power system based on a beta source and an operating method thereof. The system includes a power generating section including a plurality of beta source-based generators, a power storage section including a plurality of power storages to store electrical energy which is generated from the generators, a multiplexer configured to select at least some of the storages, an optical power learning section to receive electrical signals provided from the storages, and estimate a state of charge (SOC) of each of the storages, through machine learning, an optimal power selecting section to select a power storage, which provides the optimal power, based on the SOC of each of the storages, an output section including a plurality of output devices to output power provided from the storage selected by the optimal power selecting section, and a de-multiplexer to select at least one output device of the output devices.
Contacting area on germanium
A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.
Light detector, light detection system, lidar device, and vehicle
According to one embodiment, a light detector includes a conductive layer, a first element, a second element, a first member, a first insulating part, and a second insulating part. The conductive layer includes a first conductive portion and a second conductive portion. The first element includes a first semiconductor layer and a second semiconductor layer. The second element includes a fourth semiconductor layer and a fifth semiconductor layer. The first member is provided between the first element and the second element and electrically connected to the conductive layer. The first member is conductive. The first insulating part is provided between the first element and the first member. The second insulating part is provided between the second element and the first member.
Light detection device
A light detection device includes a photo detector and a circuit board connected to the photo detector by conductive connection parts. In this light detection device, the photo detector includes a substrate, a semiconductor layer provided on one surface of the substrate, a first groove dividing the semiconductor layer into sections for respective pixels, and first electrodes provided on the semiconductor layer and serving as the pixels. Each of the conductive connection part contains indium. Each of the first electrode includes a Ti layer and a Pt layer stacked in this order on the semiconductor layer, and the conductive connection parts are provided on the Pt layers of the first electrodes.
MONITORING COPPER CORROSION IN AN INTEGRATED CIRCUIT DEVICE
Systems and methods for monitoring copper corrosion in an integrated circuit (IC) device are disclosed. A corrosion-sensitive structure formed in the IC device may include a p-type active region adjacent an n-type active region to define a p-n junction space charge region. A copper region formed over the silicon may be connected to both the p-region and n-region by respective contacts, to thereby define a short circuit. Light incident on the p-n junction space charge region, e.g., during a CMP process, creates a current flow through the metal region via the short circuit, which drives chemical reactions that cause corrosion in the copper region. Due to the short circuit configuration, the copper region is highly sensitive to corrosion. The corrosion-sensitive structure may be arranged with less corrosion-sensitive copper structures in the IC device, with the corrosion-sensitive structure used as a proxy to monitor for copper corrosion in the IC device.
IMAGE SENSOR AND IMAGE CAPTURING DEVICE
An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.
Component and method for producing a component
The invention relates to a component comprising a first part, a second part, a housing body, and a first electrode, wherein the housing body encloses the first electrode in lateral directions at least in some regions. The first electrode has a front face and a rear face facing away from the front face, and the front and rear faces are free of a cover produced by a material of the housing body at least in some regions. The first part is arranged on the front face, and the second part is arranged on the rear face, and both the first and second parts are connected to the first electrode in an electrically conductive manner. The first electrode is designed to be continuous and is arranged between the first part and the second part in the vertical direction. Also described is a method for producing the component.
IMAGE SENSOR PACKAGE AND ENDOSCOPE
An image sensor package includes a substrate, an image sensor, a plurality of light-emitting elements, and a scattering layer. The substrate includes a plurality of first conductive contacts, a plurality of second conductive contacts, and a plurality of third conductive contacts, wherein the second conductive contacts and the third conductive contacts are electrically connected with the corresponding first conductive contacts. The image sensor is disposed on the substrate and electrically connected to the second conductive contacts. The light-emitting elements are disposed on the substrate and electrically connected with the third conductive contacts. The scattering layer covers at least one sidewall of the light-emitting elements. The abovementioned image sensor package can provide better illumination effects. An endoscope including the abovementioned image sensor package is also disclosed.
SYSTEM AND METHODS FOR MANAGING HEAT IN A PHOTONIC INTEGRATED CIRCUIT
In part, in one aspect, the disclosure relates to a system including a photonic integrated circuit (PIC) assembly, comprising a PIC comprising: a first bond pad disposed inward from an edge of the PIC a first distance; and a first wire having a first length, the first wire electrically connected to the first bond pad and extending therefrom, wherein the first distance is greater than 0.4 mm.
SILICON PHOTODETECTOR USING RANDOMLY ARRANGED METAL NANOPARTICLES AND METHOD FOR MANUFACTURING SAME
A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.