An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.

A flash light emitting diode (LED) package includes a circuit board, a flash LED device disposed on an upper surface of the circuit board n, first and third optical sensors arranged to be adjacent to a first side of the flash LED device on the upper surface of the circuit board and configured to detect light of a first wavelength and light of a second wavelength, respectively, second and fourth optical sensors arranged to be adjacent to a second side of the flash LED device on the upper surface of the circuit board and configured to detect light of the first wavelength and light of the second wavelength, respectively, and an integrated circuit (IC) chip disposed to face a third side between the first and second sides of the flash LED device on the upper surface of the circuit board.

Disclosed herein is an electronic device having a substrate, and an integrated circuit disposed within the substrate and having a top surface. The integrated circuit may be a laser emitting integrated circuit or a reflected light detector. A first interconnect layer is formed on the top surface of the substrate. A first optically transparent layer is formed on the top surface of the substrate and covering the top surface of the integrated circuit. A second interconnect layer is formed on a top surface of the first optically transparent layer. The second interconnect layer is patterned so as to not obstruct light traveling to or from the top surface of the integrated circuit through the first optically transparent layer.

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d.sub.1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.