An optoelectronic device including a carrier having a face including flat butt-jointed facets inclined in relation to each other; seeds, mainly made of a first compound selected from the group including the compounds III-V, the compounds II-VI, and the compounds IV, in contact with the carrier in the region of at least some of the joints between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements of a nanometric or micrometric size, mainly made of the first compound, on the seeds.

A method of manufacturing an optoelectronic integrated device can include: providing a semiconductor substrate including at least one optoelectronic device in the semiconductor substrate; forming a first dielectric layer on a first surface of the semiconductor substrate; forming a multilayer insulating layer on the first dielectric layer; forming a first opening in the multilayer insulating layer to expose the first dielectric layer above the optoelectronic device area; and forming a second dielectric layer on the dielectric layer, where the first dielectric layer and the second dielectric layer are anti-reflection layers.

An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.

A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

The present invention generally relates to nanoscale wires and, in particular, to nanoscale wires with heterojunctions, such as tip-localized homo- or heterojunctions. In one aspect, the nanoscale wire may include a core, an inner shell surrounding the core, and an outer shell surrounding the inner shell. The outer shell may also contact the core, e.g., at an end portion of the nanoscale wire. In some cases, such nanoscale wires may be used as electrical devices. For example a p-n junction may be created where the inner shell is electrically insulating, and the core and the outer shell are p-doped and n-doped. Other aspects of the present invention generally relate to methods of making or using such nanoscale wires, devices, or kits including such nanoscale wires, or the like.

Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber region is a single type-II InAs—GaSb interface situated between an n-type region comprising an AlSb/InAs n-type superlattice and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises one or more quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, an RCID in accordance with the present invention includes a thin absorber region and an nBn or pBp active core within a resonant cavity.

The present disclosure relates to an image sensor. The image sensor includes a substrate and a photodetector in the substrate. The image sensor further includes an absorption enhancement structure. The absorption enhancement structure is defined by a substrate depression along a first side of the substrate. The substrate depression is defined by a first plurality of sidewalls that slope toward a first common point and by a second plurality of sidewalls that slope toward a second common point. The first plurality of sidewalls extend over the second plurality of sidewalls.

The performances of a semiconductor device are improved. A method for manufacturing a semiconductor device includes the steps of: providing a semiconductor substrate having a gettering layer formed by ion implanting a cluster, and an epitaxial layer; subjecting the semiconductor substrate to a heat treatment at 800° C. or more, and thereby forming a hydrogen adsorption site; forming an element isolation film at the semiconductor substrate, to be performed thereafter; implanting an impurity for forming a first semiconductor region in the semiconductor substrate; implanting an impurity for forming a second semiconductor region; and performing a heat treatment for a photodiode, to be performed thereafter.

In one embodiment, a photo detection device is provided with a first photo detector having a first semiconductor layer with a first light receiving surface, a second photo detector having a second semiconductor layer with a second light receiving surface, and a substrate which is arranged on the first light receiving surface of the first semiconductor layer and the second light receiving surface of the second semiconductor layer and transmits light. A thickness of the first semiconductor layer and a thickness of the second semiconductor layer are different from each other.