The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.

The present invention provides an optical semiconductor device in which damage of a lens when being mounted and mounting displacement due to suction failures of a chip can be suppressed.

An optical semiconductor device according to an embodiment includes: a semiconductor substrate having a first surface and a second surface facing the first surface; an electrode formed over the first surface of the semiconductor substrate; an optical element that is electrically coupled to the electrode and is formed in the semiconductor substrate; and a lens arranged on the second surface side of the optical element. A concave part is formed in the second surface of the semiconductor substrate, and the lens is arranged at the bottom of the concave part. A top part on the second surface side of the lens is located on the first surface side relative to the second surface located around the concave part.

A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

An optical device including a shaped electrode on a substrate thereof utilizes total internal reflection to provide improved transmission of electromagnetic radiation (‘light’) to the substrate compared to standard electrode designs that involve flat electrode surfaces. Redirection of incident light by a tilted or otherwise shaped contact or material added on the contact provides otherwise reflected light to an open surface region of the substrate. Optional plasmon mediated focusing of incident p-polarized light may be realized.

A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.

A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120). The invention also relates to component and a method for manufacturing such a structure (1).

A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.