An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.

A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

A method and apparatus, the method comprising: forming first electrode portions on a substrate; providing a sheet of two dimensional material overlaying at least part of the first electrode portions; forming second electrode portions on a superstrate; positioning the superstrate overlaying the substrate so that the second electrode portions are aligned with the first electrode portions; and laminating the substrate and the superstrate together so that the sheet of two dimensional material is positioned between the aligned first electrode portions and the second electrode portions.

A plasmonic photoconductor sensing platform is provided. The plasmonic photoconductor sensing platform includes an insulating substrate; a semiconducting film placed on top of the insulating substrate; two metal contacts placed at least in part on the semiconducting film to enforce an electric field; a plurality of plasmonic nanostructures deposited on the semiconducting film and physically separated from metal contacts; an insulating layer, the insulating electrically isolating the plasmonic nanostructures from semiconductor; at least one energy source; and at least one microfluidic channel disposed on the insulating layer.

A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

The optical sensor includes a substrate, a first transistor for functioning as a light-receiving element and a second transistor for writing/reading in a pixel region provided on the substrate. The first transistor is formed by a transistor using polycrystalline silicon, the second transistor is formed by a transistor using an oxide semiconductor. A light-shielding layer is provided on the back side of the oxide semiconductor of the second transistor. Thus, it is possible to irradiate light to the optical sensor fora long time, and in addition to increasing the amount of light received by the first transistor, it is possible to suppress variations in the characteristics of the second transistor.

An optical device includes: a silicon substrate in which a plane direction of a crystal plane of a principal surface is a (111) plane, the principal surface having an uneven structure; and a conductor that is joined to the silicon substrate by Schottky junction, in which the conductor is directly joined to a (111) plane of at least one of a protruding portion or a depressed portion in the uneven structure.

A high-frequency conductor having improved conductivity comprises at least one electrically conductive base material. The ratio of the outer and inner surfaces of the base material permeable by a current to the total volume of the base material is increased by a) dividing the base material perpendicularly to the direction of current into at least two segments, which are spaced from each other by an electrically conductive intermediate piece and connected both electrically and mechanically to each other, and/or b) topographical structures in or on the surface of the base material and/or c) inner porosity of at least a portion of the base material compared to a design of the base material in which the respective feature was omitted. It was found that, as a result of these measures concerning the design, it is possible to physically arrange the same amount abase material so that a larger fraction of the base material is located at a distance of no more than skin depth from an outer or inner surface and is thus involved in current transport. As a result, a lesser fraction remains unused as a function of the skin effect.

An array substrate and manufacturing method thereof, an X-ray flat panel detector and an image pickup system are provided. The array substrate is divided into a plurality of detection units, and each of the detection units has a first electrode and a photoelectric conversion structure provided therein. The first electrode is disposed on a side of the photoelectric conversion structure opposite to a light incident side, and is electrically connected to the photoelectric conversion structure. A reflective layer that is electrically conductive is further included between the first electrode and the photoelectric conversion structure, and a surface of the reflective layer facing the photoelectric conversion structure is a reflection surface. The utilization rate of light can be enhanced by the array substrate as stated in embodiments of the invention, so that the detection accuracy of the X-ray flat panel detector is enhanced.

An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.