Contacts for solar cells and other optoelectronic devices are provided. Embodiments described herein take advantage of the surface Fermi level pinning effect to build an electrical field inside of a semiconductor to extract or inject carriers for solar cells, photodetectors, and light-emitting device applications. For example, n-type or p-type two-dimensional (2D) materials can be used in contact with an n-type semiconductor to form a “p-region” so that a p-n junction, or an i-n or n-n+ junction can be constructed. Similarly, n-type or p-type 2D materials can be used in contact with a p-type semiconductor to form an “n-region” so that an n-p junction, or an i-p or p-p+ junction can be constructed. These structures can provide sufficiently high electrical field inside the semiconductor to extract photogenerated carriers in solar cells and photodetectors or inject minority carriers for light-emitting devices.

A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.

A photovoltaic module includes a first transparent electrode layer characterized by a first sheet resistance, a second transparent electrode layer, and a photovoltaic material layer. The photovoltaic material layer is located between the first transparent electrode layer and the second transparent electrode layer. The photovoltaic module also includes a first busbar having a second sheet resistance lower than the first sheet resistance. The first transparent electrode layer, the second transparent electrode layer, and the photovoltaic material layer have an aligned region that forms a central transparent area of the photovoltaic module. The central transparent area including a plurality of sides. The first busbar is in contact with the first transparent electrode layer adjacent to at least a portion of each of the plurality of sides of the central transparent area.

A sensor device, an electronic apparatus and a method for reducing signal noise are provided. The sensor device includes a first detection region and a second detection region. The first detection region includes at least one detector unit, the detector unit includes a first detection electrode and a second detection electrode opposed to each other and a first insulating layer, the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer the second detection region includes at least one detector unit, the sensor unit includes a first sensor electrode, a second sensor electrode and a first photosensitive layer, and the first photosensitive layer is electrically connected to the first sensor electrode and the second sensor electrode.

Embodiments provide a transparent electrode having high stability, low sheet resistance, and high light transmissivity, a method for producing the transparent electrode, and an electronic device using the transparent electrode.

A transparent electrode including a structure including a transparent base material, a metal grid, metal nanowire, and a neutral polythiophene mixture. The metal grid has an embedded portion embedded in the transparent base material and a protrusion portion protruding from the transparent base material, and the metal nanowire and the neutral polythiophene mixture are arranged in contact with the transparent base material or the protrusion portion.

In one example, a sensor comprises a photovoltaic device. The photovoltaic device comprises a core having a shape that is at least partially spherical, an absorber disposed over the core, and a transparent conductor disposed over the absorber. Other examples and related methods are also disclosed herein.

Disclosed are a solar cell including an upper cell includes an upper passivation layer disposed on an upper surface of a functional layer, a transparent electrode disposed on an upper surface of the upper passivation layer, an upper first charge transport layer disposed on an upper surface of the transparent electrode, an upper electrode disposed on the upper first of the transparent electrode to be adjacent to the upper surface charge transport layer, an upper second charge transport layer disposed on the upper surface of the functional layer to be spaced apart from the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper electrode, and an upper absorption layer disposed on the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper second charge transport layer.

A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.

An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

Disclosed are a solar cell and a solar cell module comprising same, the solar cell comprising: a solar cell structure having one or more hollows passing therethrough in the height direction, and a plurality of light-concentrating parts disposed in each of the one or more hollows.