The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

A method of forming an optical thin film, comprises providing an assembly comprising a layer of semiconductor material deposited on a substrate, the semiconductor material comprising a compound of at least one metal and a group VI element; depositing a masking layer onto the layer of semiconductor material, the masking layer being patterned to expose one or more regions of the layer of semiconductor material; applying to the assembly a plasma of the group VI element in order to cause indiffusion of the group VI element into the semiconductor material in the exposed regions while the masking layer blocks indiffusion in unexposed regions, the indiffusion causing a reduction in carrier density in the semiconductor material; and removing the masking layer; thereby forming, from the layer of semiconductor material, an optical thin film having a variation in carrier density and corresponding variation in optical properties matching the patterning of the masking layer in a plane parallel to the substrate.

A photodiode includes: a semiconductor layer; a first conductive layer on the semiconductor layer and including a transparent conductive oxide; and a second conductive layer arranged between the semiconductor layer and the first conductive layer, having a work function different from a work function of the first conductive layer, and forming a Schottky junction structure with the semiconductor layer. The work function of the second conductive layer is set to lower the Schottky-barrier height, so that light in a wide wavelength band may be sensed.

A window assembly includes an electro-optic assembly that includes a first substrate that defines first and second surfaces, a second substrate that defines third and fourth surfaces, and a seal disposed about a periphery of the first and second substrates. The seal, the first substrate, and the second substrate define a chamber therebetween. A transparent electrode coating is disposed on each of the second surface and the third surface and an electro-optic medium is disposed between the first substrate and the second substrate. A controller is operably coupled with the transparent electrode coating on the second surface and the transparent electrode coating on the third surface and is configured to change a transmittance state of the electro-optic medium. An interface is operably coupled with the controller and allows adjustment of the transmittance state of the electro-optic medium. The interface includes a display that illustrates a selected transmittance state.

Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.

The present invention relates to an adhesive sheet. As the adhesive sheet of one embodiment of the present invention retains the properties of conventional adhesive sheet, such as excellent adhesion and durability in high temperature and humidity environment, it can be utilized for manufacturing large-scale electrodes at low prices, and the electrodes manufactured above can be used for various applications such as solar cell, display, and touch panel.

Disclosed are a substrate for a solar cell and a method for manufacturing the same. The method include putting negative and positive electrodes facing away from each other into suspension in which at least two different types of negatively charged cellulose nanofibers are dispersed; applying a voltage across the positive and negative electrodes such that the cellulose fibers are adsorbed onto a surface of the negative electrode; and drying the negative electrode having the cellulose fibers adsorbed thereon.

An energy harvesting system for generating electrical energy, includes a first substrate, a perovskite layer formed on the first substrate, a charge transport layer disposed on the perovskite layer, and the charge transport layer being configured to slide over the perovskite layer, and a second substrate formed on the charge transport layer.

The present invention provides a photodiode and a display screen. The photodiode includes a first electrode and a second electrode in order. When a direction of an incident light of the photodiode is a first direction, a material of the first electrode is a transparent conductive material, and a material of the second electrode is a metal material. When the direction of the incident light of the photodiode is a second direction, the second electrode is made of a transparent conductive material, and the first electrode is made of a metal material.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.