A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 .Math.s. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

The present invention relates to methods of preparing nanowire networks, as well as to nanowire networks prepared thereby. The method comprises (a) providing a substrate coated with a film of a first polymer; (b) depositing nanofibers of a second polymer onto the film to form a patterned layer comprising a nanofibre network structure; (c) depositing a layer of a first metal onto the patterned layer; (d) performing a solvent development step to selectively remove the nanofibers leaving a negative pattern exposing the first polymer film; (e) performing an etching step to remove the exposed polymer film; (f) depositing a second metal or oxide thereof onto the negative pattern to form a tem plated nanowire network; and (g) performing a lift-off step to expose the nanowire network.

The present invention relates to an electrically conductive film characterized by being able to undergo elastic deformation, having little residual strain rate and exhibiting stress relaxation properties. More specifically, the present invention relates to an electrically conductive film wherein the stress relaxation rate (R) and the residual strain rate (alpha), as measured in a prescribed extension-restoration test, are as follows: 20%≦R≦95% and 0%≦α≦3%.

Disclosed herein are purified surfactant formulations including purified short-chain fluorosurfactant and iodide additive and a two-part coating kit having the same and a silver nanowire formulation.

A preparation method for a transparent conductor, according to the present invention, comprises the steps of: a) preparing a laminate which has a transparent polymer layer and a conductive network sequentially laminated on a base material; and b) sinking the conductive network into the transparent polymer layer by applying energy to the laminate.

Provided herein is a method for forming a transparent electrode film, the method comprising forming an electrode pattern by printing an electrode pattern on a release film using a metal ink composition; forming an insulating layer by applying a curable resin on the release film on which the electrode pattern has been formed; forming a substrate layer by laminating a substrate on the insulating layer; removing the release film; and forming a conductive layer by applying a conductive material on the electrode pattern from which the release film has been removed.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

An oxide layer (2) of tin or niobium is formed on one surface of a carbon nanotube-containing layer (1) containing carbon nanotubes having an average diameter (Av) and a diameter standard deviation (σ) that satisfy a relationship 0.60>3σ/Av>0.20.