A photoelectric sensor capable of saving a space is provided. A photoelectric sensor includes a case body with a substantially rectangular parallelepiped shape that accommodates at least one of a light projecting section and a light receiving section. The case body has a front surface that has a light projecting and receiving surface that allows at least one of light from the light projecting section and light to the light receiving section to pass therethrough and a rear surface that is located on a side opposite to the front surface, and a cable that accommodates cords that are connected to at least one of the light projecting section and the light receiving section via a control section is attached to the rear surface.

Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.

The present invention relates to a device and method for detecting light allowing retrieval of a physiological parameter of a user carrying said device. To improve the efficiency of light capturing, the device (1, 2, 3, 4) comprises a light source (10) arranged for emitting light of at least a first wavelength into tissue of the subject, a wavelength converter (20) arranged for receiving at least part of the emitted light after interaction of the emitted light with the tissue and for converting the received light into at least a second wavelength different from the first wavelength, and a light sensor (30) arranged for receiving light converted by said wavelength converter.

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

The present disclosure relates to a reflective device and a display apparatus. In one embodiment, a reflective device includes: a resonant cavity configured to reflect a light of a first wavelength range; and a light conversion structure disposed within the resonant cavity and configured to convert an incident light of a second wavelength range into the light of the first wavelength range.

A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

The present disclosure provides a photosensitive circuit, a method of driving a photosensitive circuit and a display device. The photosensitive circuit includes: a first photosensitive transistor, configured to be turned on in response to a signal of a first node, to transmit a current flowing through the first photosensitive transistor to a second node and generate an induced electrical signal based on an incident light; a second photosensitive transistor, configured to be turned on in response to a first scan signal, to transmit a voltage of the first scan signal to the first node and generate an induced electrical signal based on an incident light; and a first switch, configured to be turned on in response to the first scan signal, to transmit a signal of the second node to a reading terminal. Threshold voltages of both photosensitive transistors are negatively correlated with an intensity of the incident light.

A size reduction in an optical system that detects a fluorescent photon is achieved. A photon detection operation of a photon detection unit (21) is controlled on the basis of timing of an irradiation operation of an excitation light source (50), and after excitation light emitted to a microfluidic channel (10) is switched off, a fluorescent photon generated by a target flowing in the microfluidic channel (10) is detected.

The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(In.sub.xGa.sub.1-x)Se.sub.2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

A display device is provided. The display device includes a plurality of pixels. At least one of the pixels includes a semiconductor device having a light-emitting area, a first light conversion layer disposed on the semiconductor device and a first scattering layer disposed on the semiconductor device. The first scattering layer is disposed on the first light conversion layer.