An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

A display panel and a display device are provided. In the display panel, an upconversion material layer is configured to convert interactive light from a first wave band into a second wave band. A light-sensing transistor of a light-sensing circuit is configured to convert a light intensity signal of the interactive light into an electrical signal after the wave band of the interactive light is converted. A position-detecting circuit is configured to identify a position where the interactive light is irradiated according to the electrical signal. Therefore, the display panel can interact with light having relatively long wavelengths.

A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

The present invention relates to cyanated naphthalenebenzimidazole compounds of the formula (I) and mixtures thereof, in which R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10 are each independently hydrogen, cyano or aryl which is unsubstituted or has one or more identical or different substituents R.sup.Ar, where R.sup.Ar is as defined in the claims and in the description, with the proviso that the compounds of the formula I comprise at least one cyano group. The invention further relates to color converters comprising at least one polymer as a matrix material and at least one cyanated naphthalenebenzimidazole compound or mixtures thereof as a fluorescent dye, to the use of the color converters and to lighting devices comprising at least one LED and at least one color converter. ##STR00001##

The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.

A solar panel that attains very low cost/Watt objectives is achieved by applying an optical concentrator with planar symmetry in combination with a simple 1-axis tracking system. The concentrator uses a Cassegrain optical system to provide moderate concentration factors that can be adjusted by varying the ratio of the focal lengths of the concave and convex reflecting surfaces. Concentrator dimensions can be scaled to any convenient size. They can be arrayed in parallel to form a solar panel that has the same form factor as a 1-sun solar panel. One-axis tracking is achieved by simply rotating the collector elements in synchronism so the sun is maintained in the plane of symmetry for each of the collector elements that comprise the panel.

Disubstituted diaryloxybenzoheterodiazole compound of general formula (1): in which:—Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, preferably C.sub.1-C.sub.8, alkyl groups, or from optionally substituted aryl groups;—R.sub.1, R.sub.2 and R.sub.3 are as defined in the claims. The said disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate.

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Provided are a radiation detector, a radiographic imaging apparatus, and a manufacturing method that include a TFT substrate in which a plurality of pixels that accumulate electric charges generated depending on light converted from radiation are formed in a pixel region of a first surface of a flexible base material and a terminal region of the first surface is provided with a terminal for electrically connecting a flexible cable; a conversion layer that is provided outside the terminal region on the first surface of the base material to convert the radiation into light; a first reinforcing substrate that is provided on a surface of the conversion layer opposite to a surface on a TFT substrate side and has a higher stiffness than the base material; and a second reinforcing substrate that is provided on a second surface of the base material opposite to the first surface to cover a surface larger than the first reinforcing substrate, and that are capable of suppressing that a defect occurs in the substrate and have an excellent peeling property in a reworking process.