Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

The present invention discloses a process for the preparation of metal sulphide quantum dots by using a very low cost sulphur precursor as a sulphur source. The metal sulphide quantum dots finds application in optical devices selected from photovoltaic cells, photodetectors and light-emission devices.

A light sensor module is provided. The light sensor module is used to receive a first light beam and generate an electric current corresponding to an intensity of the first light beam. The light sensor module includes a substrate, a photodiode chip, and a wavelength conversion structure. The photodiode chip is disposed on the substrate. The wavelength conversion structure is disposed on the substrate, and the photodiode chip is covered by the wavelength conversion structure. The first light beam is converted into a second light beam by the wavelength conversion structure. The photodiode chip receives the second light beam, and then generates the electric current.

A size reduction in an optical system that detects a fluorescent photon is achieved. A photon detection operation of a photon detection unit (21) is controlled on the basis of timing of an irradiation operation of an excitation light source (50), and after excitation light emitted to a microfluidic channel (10) is switched off, a fluorescent photon generated by a target flowing in the microfluidic channel (10) is detected.

Disclosed herein is a method comprising: forming one or more blobs within a footprint of a pixel of a photodetector; wherein the blobs comprise quantum dots configured to emit a pulse of visible light upon absorbing a particle of radiation; wherein the pixel is configured to detect the pulse of visible light. Also disclosed herein is a radiation detector, comprising: an array of discrete blobs with quantum dots configured to emit a pulse of visible light upon absorbing a particle of radiation; an electronic system configured to detect the particle of radiation by detecting the pulse of visible light.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

A process for the preparation of a disubstituted diaryloxybenzoheterodiazole compound having general formula (XII): ##STR00001## wherein: Z represents a sulfur atom, an oxygen atom, a selenium atom; or a group NR.sub.6 wherein R.sub.6 is selected from linear or branched C.sub.1-C.sub.20 alkyl groups, or from optionally substituted aryl groups; R.sub.2 and R.sub.3, identical or different, represent a hydrogen atom, provided that R.sub.1 does not represent a hydrogen atom; or R.sub.1, R.sub.2 and R.sub.3 are selected from linear or branched C.sub.1-C.sub.20 alkyl groups optionally containing heteroatoms, optionally substituted cycloalkyl groups, optionally substituted aryl groups, optionally substituted, linear or branched C.sub.1-C.sub.20 alkoxy groups, optionally substituted phenoxy groups, or a cyano group; or R.sub.1 and R.sub.2, may optionally be bound together so as to form, together with carbon atoms to which R.sub.1 and R.sub.2 are bound, a saturated, unsaturated, or aromatic, cyclic or a polycyclic system containing from 3 to 14 carbon atoms, optionally containing one or more heteroatoms selected from oxygen, sulfur, nitrogen, silicon, phosphorus, or selenium; or R.sub.2 and R.sub.3 may optionally be bound together so as to form, together with carbon atoms to which R.sub.2 and R.sub.3 are bound, a saturated, unsaturated, or aromatic, cyclic or a polycyclic system containing from 3 to 14 carbon atoms, saturated, unsaturated, or aromatic, optionally containing one or more heteroatoms selected from oxygen, sulfur, nitrogen, silicon, phosphorus, or selenium; wherein R.sub.a and R.sub.b, which are different, represent a hydrogen atom; or are selected from linear or branched C.sub.1-C.sub.20 alkyl groups optionally containing heteroatoms, optionally substituted cycloalkyl groups, optionally substituted aryl groups, optionally substituted linear or branched C.sub.1-C.sub.20 alkoxy groups, optionally substituted phenoxy groups, —COOR.sub.c groups wherein R.sub.c is selected from linear or branched C.sub.1-C.sub.20 alkyl groups, —CON(R.sub.c).sub.2, wherein R.sub.c has the same meanings described above, or —N(R.sub.c).sub.2 groups wherein R.sub.c has the same meanings described above.

An encapsulation cover for an electronic package includes a frontal wall with a through-passage extending between faces. The frontal wall includes an optical element that allows light to pass through the through-passage. A cover body and a metal insert that is embedded in the cover body, with the cover body being overmolded over the metal insert, defines at least part of the frontal wall.

An optical filter including a base member having a layer containing near-infrared absorbing fine particles and a dielectric multilayer film, the optical filter satisfying a requirement that, in a wavelength range of 400 nm to 650 nm, an average of transmittance of any of light incident from a direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees, and light obliquely incident at an angle of 60 degrees is 45% or higher and lower than 85%; and a requirement that, in a wavelength range of 800 nm to 1,200 nm, an average of optical density (OD value) of any of light incident from the direction perpendicular to the optical filter, light obliquely incident at an angle of 30 degrees with respect to the perpendicular direction, and light obliquely incident at an angle of 60 degrees with respect to the perpendicular direction is 1.7 or higher.

A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.