The present invention relates to 1,6,7,12-tetra-(2-isopropylphenoxy)-substituted perylene tetracarboxylic acid diimides of the formula (I) wherein R.sup.1 and R.sup.2 independently of each other are selected from hydrogen, C.sub.1-C.sub.24-alkyl, C.sub.1-C.sub.24-haloalkyl, C.sub.3-C.sub.24-cycloalkyl, C.sub.6-C.sub.24-aryl and C.sub.6-C.sub.24-aryl-C.sub.1-C.sub.10-alkylene, where the rings of cydoalkyi, aryl, and aryl-alkylene in the three last-mentioned radicals are unsubstituted or substituted as defined in the claims and in the description. Moreover, the present invention relates to the use of said perylene compounds, in particular to the use of said perylene compound(s) in color converters, for data transmission and in security inks for security printing. The present invention also relates to the use of said color converters, to their use in lighting devices, to lighting devices comprising at least one LED and at least said color converter and to a device producing electric power upon illumination comprising a photovoltaic cell and said color converter. ##STR00001##

A rectenna device (400) for converting incident light to electrical energy is disclosed. The rectenna device comprises a substrate (402), a first metallic layer (404) having a predefined thickness deposited on top of the substrate, a rectifying element (405) deposited on top of the first metallic layer, a second metallic layer (408) deposited on top of said rectifying element and configured to collect electromagnetic waves of the incident light and to couple it into plasmonic waves within the rectenna device, the second metallic layer comprising an array of a plurality of metallic patches (410) spaced from each other according to a predefined spacing, each metallic patch having predefined dimensions. The rectifying element is configured to rectify the plasmonic waves to produce a direct current, the plasmonic waves being generated at one or more operating wavelengths, and at least one dimensioning parameter of the rectenna device is determined from at least one operating wavelength, the at least one dimensioning parameter being chosen in a group comprising the dimensions of the plurality of metallic patches, the spacing of the metallic patches in the array, and the predefined thickness of the first metallic layer.

An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

Provided are a radiation detector, a radiographic imaging apparatus, and a manufacturing method that include a TFT substrate in which a plurality of pixels that accumulate electric charges generated depending on light converted from radiation are formed in a pixel region of a first surface of a flexible base material and a terminal region of the first surface is provided with a terminal for electrically connecting a flexible cable; a conversion layer that is provided outside the terminal region on the first surface of the base material to convert the radiation into light; a first reinforcing substrate that is provided on a surface of the conversion layer opposite to a surface on a TFT substrate side and has a higher stiffness than the base material; and a second reinforcing substrate that is provided on a second surface of the base material opposite to the first surface to cover a surface larger than the first reinforcing substrate, and that are capable of suppressing that a defect occurs in the substrate and have an excellent peeling property in a reworking process.

Disubstituted diaryloxybenzoheterodiazole compound of general formula (1): in which:—Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, preferably C.sub.1-C.sub.8, alkyl groups, or from optionally substituted aryl groups;—R.sub.1, R.sub.2 and R.sub.3 are as defined in the claims. The said disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate. ##STR00001##

A display panel, a display screen, and a display device are provided. The display panel includes a display substrate; a light-emitting layer located on the display substrate and comprising a plurality of light-emitting units; an encapsulation structure disposed on the light-emitting layer to encapsulate the light-emitting layer; and a visible light conversion layer configured to receive visible lights and convert the visible lights into non-visible lights; wherein the visible light conversion layer is disposed in the encapsulation structure or the display substrate.

The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E.sub.G), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material. In another aspect, the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, where the singlet fission host exhibits an excitation triplet energy (E.sub.T-SF) greater than or equal to an excitation triplet energy (E.sub.T-PE) exhibited by the phosphorescent emitter dopant.

A method for producing a component and a component are disclosed. In an embodiment a method includes providing a substrate, applying a composite of components to the substrate, forming an anchoring layer on the composite of components, attaching a carrier to the anchoring layer, wherein the anchoring layer is disposed between the substrate and the carrier and removing the substrate, wherein the composite of components is divided into a plurality of components by forming a plurality of separating trenches, wherein, after removing the substrate, the components continue to be held on the carrier by the anchoring layer, and wherein the anchoring layer comprises at least one predetermined breaking layer having at least one predetermined breaking position, the predetermined breaking position being laterally surrounded by the separating trenches and—in a plan view of the carrier—being covered by one of the components.

A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.