An optical detection unit includes a first wiring substrate that has a first main surface, a plurality of optical detection chips that each have a light receiving surface and a rear surface on a side opposite to the light receiving surface and are two-dimensionally arranged on the first main surface, a first bump electrode that electrically connects the optical detection chip to the first wiring substrate, a light transmitting portion that is provided on the light receiving surface, and a light shielding portion that has light reflection properties or light absorption properties. The optical detection chip includes a Geiger-mode APD and is mounted on the first wiring substrate by the first bump electrode in a state in which the rear surface faces the first main surface.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is s floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. For example, a mesa can include two or more active regions, each of which has a different wavelength for the corresponding main peak of radiative recombination. The active regions can be configured to be operated simultaneously or can be capable of independent operation. A system can include one or more optoelectronic devices, each of which can be operated as an emitter or a detector.

The present disclosure provides a fluorescent nitrogen-vacancy diamond (FNVD) having a plurality of nitrogen-vacancy centers with a concentration about 1 ppm to 10,000 ppm. The FNVD as built-in fluorophores exhibit a nearly constant emission profile over 540 nm to 850 nm upon excitation by vacuum ultraviolet (VUV), extreme ultraviolet (EUV) and X-rays for the energy larger than 6.2 eV. Applying the FNVD sensor can measure VUV/EUV/X-rays as a sensing sheet, manufacturing method and uses thereof, sensor and lithography apparatus. The superb photostability and broad applicability of FNVDs offer a promising solution for the long-standing problem of lacking robust and reliable detectors for VUV, EUV, and X-rays.

Broadband photodetectors, detector arrays, sensors and systems, capable of detection and sensing ultraviolet (UV), visible (VIS) and shortwave infrared (SWIR) wavelengths of light, are disclosed. The devices may operate over a wavelength range between about 0.2 m and 1.8 m. In particular, the devices include a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV and a luminescent layer.

According to one embodiment, a radiation detection panel includes a substrate, a plurality of photoelectric conversion elements, an insulating layer, a protective layer, a bonding layer, a scintillator, and a moisture-proof layer. The photoelectric conversion elements are provided on one surface of the substrate. The insulating layer is provided on the photoelectric conversion elements and is light transmissive. The protective layer is provided at least on the insulating layer. The bonding layer is provided between the insulating layer and the protective layer, includes a material having at least one of a reactive group that chemically bonds to an inorganic material and a reactive group that chemically bonds to an organic material, and is light transmissive. The scintillator is provided on the protective layer and covers the plurality of photoelectric conversion elements. The moisture-proof layer covers at least the scintillator.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

The invention provides highly fluorescent materials comprising a heterocyclic systems represented by formula (I): D.sub.1-HetL-Het.sub.iD.sub.2, wherein i is 0 and Het is ##STR00001##
wherein X is S. The chromophores are particularly useful for absorption and emission of photons in the visible and near infrared wavelength range. The photo-stable highly luminescent chromophores are useful in various applications, including in wavelength conversion films. Wavelength conversion films have the potential to significantly enhance the solar harvesting efficiency of photovoltaic or solar cell devices.