An optical sensing device is provided. The optical sensing device includes a substrate, a housing, a light receiver, and an optical structure. The housing is disposed on an upper surface of the substrate, and the housing and the substrate collectively define a cavity. The light receiver is disposed in the cavity, and the housing surrounds the light receiver. The optical structure is disposed on an upper surface of the light receiver, and the optical structure includes a plurality of concave portions and a plurality of convex portions. The concave portions and the convex portions are alternately arranged to form an array, and a light transmittance of the concave portions is greater than a light transmittance of the convex portions.

The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

A method of manufacturing a solar cell, including providing a patterned silicon wafer having a covered area and an uncovered area, and forming at least one electrode layer in the uncovered area in a low-temperature process.

A textured structure of a crystalline silicon solar cell that is mainly constructed by a plurality of micro-structures similar to inverted pyramids; the lower part of the micro-structure similar to the inverted pyramid is an inverted pyramidal structure, and the upper part thereof is an inverted circular truncated conical structure; and the top of the micro-structure similar to the inverted pyramid is selected from one or more of a circle, an oval, or a closed figure enclosed by multiple curves. Experiments prove that the conversion efficiency of a cell piece may be improved by 0.25-0.4%, thereby obtaining unexpected effects.

Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as siloxane derivatives of amino acids that have surface-active properties.

A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.