A solar cell panel is disclosed. The disclosed solar cell panel includes a semiconductor substrate, a conductive region disposed in or on the semiconductor substrate, an electrode connected to the conductive region, a lead electrically connected to the electrode. The electrode includes finger lines, and a bus bar line extending across the finger lines, and electrically connected to the lead. First and second end edge areas are arranged at opposite ends of the bus bar line disposed adjacent to opposite edges of the semiconductor substrate, respectively. The bus bar line includes electrode portions respectively disposed at the first end second end edge areas. Each electrode portion includes an opening formed through the each electrode portion, and an outermost end disposed at a position flush with corresponding ones of the outermost ones of the finger lines or a position outwards of the corresponding outermost finger lines.

An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.

A system includes a plurality of roofing modules and a plurality of photovoltaic modules. The roofing modules include a first layer and a second layer. The first layer has a first surface that is textured. The roofing modules are configured to be installed on the roof deck of a structure proximate to the photovoltaic modules. An appearance of the roofing modules aesthetically matches an appearance of the photovoltaic modules when viewed from a vantage point located at a ground level of the structure.

The present invention relates to an optoelectronic device comprising a substrate having a first and a second substantially planar face, a series of grooves in the first substantially planar face, and a first and a second electrical conductor on the second substantially planar face; wherein a first face of the first electrical conductor and a first face of the second electrical conductor are reflective.

A photoelectric converter including a crystalline silicon substrate having a light receiving surface including a smooth section and a rough surface section having surface roughness greater than the surface roughness of the smooth section and a light transmissive inorganic film so provided as to overlap with the smooth section and the rough surface section, and the film thickness t1 of a portion of the inorganic film that is the portion where the inorganic film overlaps with the rough surface section is smaller than the film thickness t2 of a portion of the inorganic film that is the portion where the inorganic film overlaps with the smooth section. The arithmetic average roughness of the rough surface section is preferably greater than or equal to 0.1 μm.

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

Provided in one embodiment of the present invention is a solar cell upper electrode which is positioned on a photoactive layer and which includes a conductive polymer layer, wherein ionic liquid comes in contact with the surface of the conductive polymer layer so as to the post-treated, and, due to the post-treatment, an ion-exchange reaction occurs only in the upper area of the conductive upper electrode according to an embodiment of the present invention is not gelated so as to improve electrode performance, and does not oxidize a photoactive layer positioned under the electrode so as to be usable as an upper electrode, and thus can improve the performance of a solar cell to which the electrode is applied.

Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

Disclosed are a substrate for a solar cell and a method for manufacturing the same. The method include putting negative and positive electrodes facing away from each other into suspension in which at least two different types of negatively charged cellulose nanofibers are dispersed; applying a voltage across the positive and negative electrodes such that the cellulose fibers are adsorbed onto a surface of the negative electrode; and drying the negative electrode having the cellulose fibers adsorbed thereon.

A pixel for an imaging sensor is disclosed that includes a photodetector and a metasurface. The photodetector includes a first surface and sidewalls that extend into the photodetector in a first direction from the first surface. The metasurface is formed on the first surface and includes nanostructures that bend a predetermined range of wavelengths of light at least 70 degrees in opposing angles from a direction that is substantially perpendicular to the first surface, and a standing wave pattern forms in an active region of the pixel. The predetermined range of wavelengths of light includes 700 nm to 1100 nm inclusive. In one embodiment, the pixel is a silicon-based photodetector, a thickness of the pixel in the first direction is less than or equal to 5 μm, and the pixel absorbs at least 20% of a power of the predetermined range of wavelengths of light.