A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

The present invention is directed to a conductive paste used for solar cell electrodes comprising, (i) 60 wt % to 95 wt % of a conductive powder, based on the total weight of the conductive paste, (ii) 0.1 wt % to 10 wt % of a lead-tellurium-oxide powder, based on the total weight of the conductive paste, comprising 20 wt % to 60 wt % of PbO and 20 wt % to 60 wt % of TeO.sub.2, based on the total weight of the lead-tellurium-oxide powder, (iii) 3 wt % to 38 wt % of an organic medium, based on the total weight of the conductive paste, and (iv) 0.01 wt % to 5.0 wt % of lithium oxide powder selected from the group consisting of LiMnO.sub.3, Li.sub.2WO.sub.4, Li.sub.2CO.sub.3, Li.sub.2TiO.sub.3, Li.sub.4Ti.sub.5O.sub.12, Li.sub.2MoO.sub.4 and a mixture thereof, based on the total weight of the conductive paste.

A protective film for a thin film device comprises a composite inorganic film that may be deposited on a parylene film or deposited directly on the device. Optionally, additional parylene and composite inorganic protective films may be added. The composite inorganic protective film is on the order of 1-100 nm thick and contains a material (e.g., Si) that forms a tenacious oxide at room temperature. When the device is exposed to air after deposition of the composite inorganic film, the oxidizable species oxidizes and fills voids to create an effective diffusion barrier.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

An electromagnetic wave sensor device according to an aspect of the disclosure, comprising: a first sensor configured to perform an output in accordance with electromagnetic waves absorbed by a first quantum dot, an upper limit wavelength of electromagnetic waves absorbable by the first quantum dot being a first wavelength, a second sensor configured to perform an output in accordance with electromagnetic waves absorbed by a second quantum dot different from the first quantum dot, an upper limit wavelength of electromagnetic waves absorbable by the second quantum dot being a second wavelength longer than the first wavelength; and a calculation unit configured to calculate a difference between the output of the second sensor and the output of the first sensor.

Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

Disclosed are functionalized Group IVA particles, methods of preparing the Group IVA particles, and methods of using the Group IVA particles. The Group IVA particles may be passivated with at least one layer of material covering at least a portion of the particle. The layer of material may be a covalently bonded non-dielectric layer of material. The Group IVA particles may be used in various technologies, including lithium ion batteries and photovoltaic cells.