Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a lead halide precursor ink. Preparing a lead halide precursor ink comprises the steps of: introducing a lead halide into a vessel, introducing a first solvent to the vessel, and contacting the lead halide with the first solvent to dissolve the lead halide. The method further comprises depositing the lead halide precursor ink onto a substrate, drying the lead halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

The present invention relates to a boron-dipyrromethene (BODIPY)-based copolymer, a method for preparing the copolymer, a solar cell including the copolymer, and a method for manufacturing the solar cell. By applying the copolymer of the present invention to a hole transporting layer, a solar cell having improved device characteristics such as charge mobility and power conversion efficiency and allowing those characteristics to be maintained for a long time may be provided.

Methods are described that include contacting an alkyl ammonium metal halide film with an alkyl ammonium halide, where the alkyl ammonium metal halide film includes a first halogen and a metal, the alkyl ammonium halide includes a second halogen, such that the contacting forms an alkyl ammonium metal mixed-halide film that interfaces with the alkyl ammonium metal halide film, where the alkyl ammonium metal mixed-halide film includes the first halogen, the second halogen, and the metal.

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

A method for forming solar cell electrodes and a solar cell, the method including forming a first electrode layer by applying a first solar cell electrode composition, the first solar cell electrode composition including a conductive powder, a first glass frit, and an organic vehicle; forming a second electrode layer by applying a second solar cell electrode composition onto the first electrode layer, the second solar cell electrode composition including the conductive powder, a second glass frit, and the organic vehicle, the second glass frit being different from the first glass frit and containing about 15 mol % to about 30 mol % of silicon (Si) oxide; and baking the first electrode layer and the second electrode layer.

A photoelectric conversion element is provided. The photoelectric conversion element comprises a substrate, a first electrode, an electron transport layer, a hole transport layer, and a second electrode. The electron transport layer comprises a photosensitizing compound. The hole transport layer comprises a basic compound A and an ionic compound B. The basic compound A is represented by the following formula (1): ##STR00001##
where each of R.sub.1 and R.sub.2 independently represents an alkyl group or an aromatic hydrocarbon group, or R.sub.1 and R.sub.2 share bond connectivity to form a nitrogen-containing heterocyclic ring; and the ionic compound B is represented by the following formula (2): ##STR00002##
where X.sup.+ represents a counter cation.

The present invention relates to a perovskite solar battery and a tandem solar battery including the same and, more particularly, to a perovskite solar battery, which can ensure reliability and large area uniformity, and a tandem solar battery. According to the present invention, provided are the perovskite solar battery and the tandem solar battery including the same, the perovskite solar battery facilitating reliability and a band gap control by respectively applying a p-type Si thin film layer and an n-type Si thin film layer to a hole transport layer and an electron transport layer, and thus a lifespan and light conversion efficiency can increase.