A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a lead and tin halide precursor ink. Preparing a lead and tin halide precursor ink comprises the steps of introducing a lead halide and a tin halide into a vessel; introducing a first solvent to the vessel; and contacting the lead halide and the halide with the first solvent to dissolve the lead halide and the tin halide to form the lead and tin halide precursor ink; depositing the lead and tin halide precursor ink onto a substrate; drying the lead and tin halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

The present invention relates to a multi-layer material comprising an assembly of layers, called front layers, capable of forming a front photovoltaic cell, and an assembly of layers, called rear layers, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

The embodiment provides a graphene-containing membrane producible by wet-coating and excellent in electric properties, a process for producing the membrane, a graphene-containing membrane laminate, and a photoelectric conversion device using the graphene-containing membrane. The graphene-containing membrane contains graphene having a graphene skeleton combined with polyalkyleneimine chains. The membrane has a ratio of the photoelectron intensity at the energy peak position of C1s orbital to that at the bonding energy on an X-ray photoelectron spectrum measured on an ITO film of 288 eV in a range of 5.5 to 20. This membrane can be produced by heating a graphene oxide-containing film in the presence of polyalkyleneimine and further heating the film in the presence of a reducing agent. The graphene-containing membrane can be so installed in a photoelectric conversion device that it is placed between the photoelectric conversion layer and the electrode.

The present technology relates to a solid-state imaging device that can further reduce the influence the film stress generated in an upper electrode has on a photoelectric conversion film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and two or more light shielding films formed at positions higher than the photoelectric conversion film with respect to the semiconductor substrate. The present technology can be applied to solid-state imaging devices, electronic apparatuses, and the like, for example.

A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.

A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a germanium halide precursor ink. Preparing a germanium halide precursor ink comprises the steps of: introducing a germanium halide into a vessel, introducing a first solvent to the vessel, and contacting the germanium halide with the first solvent to dissolve the germanium halide. The method further comprises depositing the germanium halide precursor ink onto a substrate, drying the germanium halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO.sub.2 is greater than 15 mol % but less than or equal to 95 mol %.