Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots.

This light sensitive element comprises: a substrate; a light absorbing layer containing InGaA, the light absorbing layer being disposed on the substrates; and semiconductor layers containing InAsP. The semiconductor layers are disposed on an upper surface and on a lower surface of the light absorbing layer, respectively. The semiconductor layers constitutes a quantum well structure with the light absorbing layer.

A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

The present disclosure relates to a photoelectric detector. The photoelectric detector comprises a semiconductor device, a first electrode, a second electrode, and a current detection element. The semiconductor device comprises a semiconductor layer, a first carbon nanotube, and a second carbon nanotube. The semiconductor layer comprises a N-type semiconductor layer and a P-type semiconductor layer, and the semiconductor layer defines a first surface and a second surface. The first carbon nanotube is on the first surface and electrically connected the first electrode. The second carbon nanotube is on the second surface and electrically connected the second electrode. The first carbon nanotube and the second carbon nanotube intersects with each other. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor layer, and the second carbon nanotube.

Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S.sup.2, HS.sup., Se.sup.2, Te.sup.2, OH.sup., BF.sub.4.sup., PF.sub.6.sup., Cl.sup., Br.sup., I.sup., As.sub.2Se.sub.3, Sb.sub.2S.sub.3, Sb.sub.2Te.sub.3, Sb.sub.2Se.sub.3, As.sub.2S.sub.3 or a mixture thereof; and wherein the absorption of the CH bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.

A surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof are provided. A surface ligand molecule is modified on a plasmonic nanostructure, a plasmonic crystal face structure is bound to the surface ligand molecule, a semiconductor nanostructure seed crystal is located on the plasmonic crystal face structure, a one-dimensional semiconductor nanostructure is located on the semiconductor nanostructure seed crystal, and all parts are in tight contact. The heterogeneous integration material achieves a lattice match at an interface, greatly reduces a loss caused by defects and rough crystal faces, and can achieve direct coupling of a surface plasmon mode and an optical mode. The heterogeneous integration material has a large application prospect in the fields of a nanolaser, a nano heat source and photoelectric detection and photocatalysis.

An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m.Math.K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

A surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof are provided. A surface ligand molecule is modified on a plasmonic nanostructure, a plasmonic crystal face structure is bound to the surface ligand molecule, a semiconductor nanostructure seed crystal is located on the plasmonic crystal face structure, a one-dimensional semiconductor nanostructure is located on the semiconductor nanostructure seed crystal, and all parts are in tight contact. The heterogeneous integration material achieves a lattice match at an interface, greatly reduces a loss caused by defects and rough crystal faces, and can achieve direct coupling of a surface plasmon mode and an optical mode. The heterogeneous integration material has a large application prospect in the fields of a nanolaser, a nano heat source and photoelectric detection and photocatalysis.

A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.