The present disclosure relates to large cell sheets, solar cells, shingled solar modules, and manufacturing method thereof. A top surface of a boundary portion of units of the large cell sheet is divided into a cutting area, top surface bonding areas and top surface electrically-conductive contact areas. The cutting area is configured in a way that the large cell sheet can be cut along the cutting area; the top surface bonding areas and the top surface electrically-conductive contact areas are provided alternately, the cutting area and the top surface electrically-conductive contact areas are formed as an overlapping edge of the solar cell, and after the splitting of the large cell sheet, the top surface electrically-conductive contact areas can directly contact the bottom surface of another solar cell to achieve electrically-conductive connection. The large cell sheet according to the present disclosure can be split conveniently, and the individual solar cells are provided with dedicated bonding areas and electrically-conductive contact areas. Such an arrangement can optimize the production process and use performance of the solar cells.

Methods, apparatus and systems are described that relate to uncooled long-wave infrared (LWIR) photodetectors capable of operating at room temperature and having a simple structure that can be manufactured at low cost. One example LWIR photodetector includes a layer of amorphous silicon (a-Si) disposed on a silicon substrate and a layer of amorphous germanium (a-Ge) disposed on the a-Si layer, wherein the a-Ge layer is operable to absorb infrared light and provide photoconductive gain, and the a-Si layer is operable to produce carrier multiplication via cycling excitation process.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A light-sensitive sensor, an array substrate, and an electronic equipment are provided. The light-sensitive sensor includes a third metal layer, a second semiconductor layer, and a fourth metal layer. The third metal layer includes a second gate. The second semiconductor layer includes conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer. The fourth metal layer disposed on the second semiconductor layer, and the fourth metal layer includes a second source and a second drain.

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

Embodiments of the present invention relate to a thin film transistor array panel and a display device including the same. An exemplary embodiment of the present invention provides a thin film transistor array panel and a display device including the same, including: an insulation substrate including an upper surface and a lower surface; a light blocking member disposed on or facing the upper surface of the insulation substrate and defining a plurality of openings; and a thin film transistor disposed on the upper surface of the insulation substrate. The insulation substrate may include a plurality of recesses formed in the opening in the lower surface of the insulation substrate, each recess positioned to correspond to one of the openings.

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.