A method of manufacturing a carrier-selective contact junction silicon solar cell includes: preparing a conductive silicon substrate; forming a first passivation layer and a second passivation layer on and under the conductive silicon substrate, respectively; forming an electron-selective contact layer under the second passivation layer; forming a hole-selective contact layer on the first passivation layer; forming an upper transparent electrode on the hole-selective contact layer; forming an upper metal electrode on the upper transparent electrode; and forming a lower metal electrode under the electron-selective contact layer. In forming the hole-selective contact layer, a sandwich-structured multilayer film is formed by depositing a copper iodide thin film on a top surface and a bottom surface of an iodine thin film, and a single-film copper iodide thin film is formed by low-temperature annealing the sandwich-structured multilayer film.

An optoelectronic semiconductor component is disclosed. In an embodiment an optoelectronic semiconductor component includes a front side, a first diode and a second diode arranged downstream of one another in a direction away from the front side and electrically connected in series such that the first diode is located closer to the front side than the second diode and an electrical tunnel contact between the first and the second diodes, wherein the second diode comprises a diode layer of Si.sub.nGe.sub.1-n, where 0≤n≤1, wherein the first diode comprises a first partial layer of SiGeC, a second partial layer of SiGe and a third partial layer of SiGeC, and wherein the partial layers follow one another directly in the direction away from the front side according to their numbering such that the first and third partial layers are of (Si.sub.yGe.sub.1-y).sub.1-xC.sub.x, whereas 0.05≤x≤0.5 or 0.25≤x≤0.75, and whereas 0≤y≤1, and the second partial layer is of SizGe1-z, whereas 0≤z≤1.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×10.sup.17 cm.sup.−3 or more, and is lower than the dopant concentration of the first concentration layer.

A photovoltaic device includes an electrically-conductive front contact layer; an electrically-conductive back contact layer, the back contact layer being intended to be situated further from a source of incident light than the front contact layer; and a semiconductor-based PIN junction having a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer. The layer of the PIN junction situated closest to the back contact layer is a silicon-germanium alloy layer including at least 2 mol % of germanium.

In a carrier-selective contact junction silicon solar cell according to the present invention, a copper iodine thin film as a hole-selective contact layer is formed through low-temperature annealing so that excellent p-type semiconductor properties are maintained, and electrical conductivity and passivation properties become excellent, thereby improving photoelectric conversion efficiency.

In a carrier-selective contact junction silicon solar cell according to the present invention, a copper iodine thin film as a hole-selective contact layer is formed through low-temperature annealing so that excellent p-type semiconductor properties are maintained, and electrical conductivity and passivation properties become excellent, thereby improving photoelectric conversion efficiency.

A detection device comprising: an insulating substrate; a plurality of gate lines that are provided on the insulating substrate, and extend in a first direction; a plurality of signal lines that are provided on the insulating substrate, and extend in a second direction intersecting the first direction; a switching element coupled to each of the gate lines and each of the signal lines; a first photoelectric conversion element that comprises a first semiconductor layer containing amorphous silicon, and is coupled to the switching element; and a second photoelectric conversion element that comprises a second semiconductor layer containing polysilicon, and is coupled to the switching element.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.