A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): ##STR00001##
wherein, in Formula (A), X.sup.1 represents NH, S, or O; each of X.sup.2 and X.sup.3 independently represents NH.sub.2, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

An electronic device includes a semiconductor nanoparticle, and a method of manufacturing the semiconductor nanoparticle is additionally provided. The semiconductor nanoparticle includes: a core including a first element; and a shell covering at least a portion of a surface of the core and including a second element and a third element, wherein the first element, the second element, and the third element are different from each other, and the first element and the second element are chemically bonded to each other on the at least a portion of the surface of the core.

A device for radiation detection includes a first electrode, a second electrode spaced apart from the first electrode, and a macroscale structure disposed between the first electrode and the second electrode. The macroscale structure comprises a composite arrangement of nanocrystalline particles. The nanocrystalline particles comprise a lead chalcogenide material. The nanocrystalline particles establish conductive paths between the first electrode and the second electrode without an intervening conductive polymer agent.

A device for radiation detection includes a first electrode, a second electrode spaced apart from the first electrode, and a macroscale structure disposed between the first electrode and the second electrode. The macroscale structure comprises a composite arrangement of nanocrystalline particles. The nanocrystalline particles comprise a lead chalcogenide material. The nanocrystalline particles establish conductive paths between the first electrode and the second electrode without an intervening conductive polymer agent.

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold.

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold.

Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.

Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.

The invention is directed to a photovoltaic apparatus comprising a carrier substrate. The carrier substrate carries printed structures comprising: a plurality of photovoltaic modules, each module including first and second terminals and a plurality of photovoltaic cells electrically connected between the first and second module terminals; a first bus bar extending along one side of the photovoltaic modules; a second bus bar extending along an opposite side of the photovoltaic modules; and a plurality of intermodule rails, each inter-module rail being associated with a photovoltaic module. The apparatus includes a plurality of selectively configurable junctions, one or more of the junctions being configurable to enable a photovoltaic module to be selectively connected to or disconnected from an adjacent photovoltaic module via one or more inter-module rails, and/or enable a module terminal to selectively connect with or disconnect from one of the first and second bus bars, such that the photovoltaic modules can be selectively electrically connected in series and/or parallel on demand.

Structures and methods for electron-hole photogeneration by plasmonic multiple exciton generation in light absorbing layers and solar cells are disclosed.