In one aspect, a medical device may be configured to couple to a body, the medical device comprising: a substrate configured to couple to a user's skin; a photodetector comprising an array of quantum dots, wherein the array of quantum dots includes a first quantum dot of a first size and a second quantum dot of a second size, wherein the first size is different from the second size; a first illuminator configured to emit light at a first range of wavelengths; and a second illuminator configured to emit light at a second range of wavelengths. The second range of wavelengths may be different from the first range of wavelengths.

In one aspect, a medical device may be configured to couple to a body, the medical device comprising: a substrate configured to couple to a user's skin; a photodetector comprising an array of quantum dots, wherein the array of quantum dots includes a first quantum dot of a first size and a second quantum dot of a second size, wherein the first size is different from the second size; a first illuminator configured to emit light at a first range of wavelengths; and a second illuminator configured to emit light at a second range of wavelengths. The second range of wavelengths may be different from the first range of wavelengths.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

An apparatus and method, the apparatus including a charge carrier wherein the charge carrier includes a continuous three dimensional framework including a plurality of cavities throughout the framework; sensor material provided throughout the charge carrier; wherein the sensor material is configured to transduce a detected input and change conductivity of the charge carrier in dependence of the detected input.

A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

A process for the post-deposition treatment of colloidal quantum dot films to improve photodetector performance. A colloidal quantum dot film is first deposited on a suitable substrate or device structure, given a ligand exchange, and then allowed to dry into a completed film. Next, a solution is prepared consisting of dilute H.sub.2O.sub.2 mixed with a polar solvent such as isopropyl alcohol solution. The prepared film and substrate are then immersed into the prepared solution over a set interval of time. After which, the film is removed and rinsed with solvent, then dried with clean N.sub.2 gas. After this treatment, the colloidal quantum dot film is ready for use as a photodetector.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.