A method of producing photovoltaic cells with the μ-tandem architecture based on crystalline silicon substrates and quantum dots, ensuring both effective and stable operation of the entire tandem system as well as high absorption in the spectral range from UV to MIR and operation in scattered and incident light conditions at different angles, acting as an anti-reflective layer. A further purpose of the invention is to develop a new structure of a μ-tandem photovoltaic cell based on microcrystalline silicon (Si) layers and a layer of nanometric semiconductor structures with a core-shell architecture such that the resulting structures work as a tandem cell with the characteristics of micro-cells, connected together in its lower part.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

A sensor assembly for determining one or more features of a local area is presented herein. The sensor assembly includes a plurality of stacked sensor layers. A first sensor layer of the plurality of stacked sensor layers located on top of the sensor assembly includes an array of pixels. The top sensor layer can be configured to capture one or more images of light reflected from one or more objects in the local area. The sensor assembly further includes one or more sensor layers located beneath the top sensor layer. The one or more sensor layers can be configured to process data related to the captured one or more images. A plurality of sensor assemblies can be integrated into an artificial reality system, e.g., a head-mounted display.

The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).

The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).

Methods of fabricating nanocrystals are disclosed. Such methods may include providing copper sulfide core nanocrystals and providing a lead precursor. Moreover, the copper sulfide core nanocrystals may be reacted with the lead precursor to generate copper doped lead sulfide nanocrystals. Related nanocrystals and optoelectronic devices are also disclosed.

Methods of fabricating nanocrystals are disclosed. Such methods may include providing copper sulfide core nanocrystals and providing a lead precursor. Moreover, the copper sulfide core nanocrystals may be reacted with the lead precursor to generate copper doped lead sulfide nanocrystals. Related nanocrystals and optoelectronic devices are also disclosed.

An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.

An electromagnetic wave detector 100 comprises: a substrate 5 having a front surface and a back surface; an insulating layer 4 formed of a rare earth oxide, which is provided on the front surface of the substrate 5; a pair of electrodes 2 provided on the insulating layer 4 so as to be arranged to face each other across a gap; and a two-dimensional material layer 1 provided on the insulating layer 4 so as to be electrically connected to the pair of electrodes 2. The rare earth oxide contains a base material made of an oxide of a first rare earth element, and a second rare earth element different from the first rare earth element, which is activated in the base material.