An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

Provided herein are core-shell heterostructures design comprising a metal (e.g., noble metal) nanoparticle core and a transition metal dichalcogenide (TMD) shell, and methods of preparation and use thereof. In particular embodiments, the core-shell heterostructures described herein are synthesized by direct growth of a monolayer or multilayer fullerene-like TMD shell on a metal (e.g., noble metal) nanoparticle core, exhibit unique Raman scattering and photoluminescence characteristics, and are useful, for example, in plasmonic hot electron enhanced optics and optoelectronics.

Provided herein are core-shell heterostructures design comprising a metal (e.g., noble metal) nanoparticle core and a transition metal dichalcogenide (TMD) shell, and methods of preparation and use thereof. In particular embodiments, the core-shell heterostructures described herein are synthesized by direct growth of a monolayer or multilayer fullerene-like TMD shell on a metal (e.g., noble metal) nanoparticle core, exhibit unique Raman scattering and photoluminescence characteristics, and are useful, for example, in plasmonic hot electron enhanced optics and optoelectronics.

A process for producing silicon nano-particles from a raw silicon material, the process including steps of alloying the raw silicon material with at least one alloying metal to form an alloy; thereafter, processing the alloy to form alloy nano-particles; and thereafter, distilling the alloying metal from the alloy nano-particles whereby silicon nano-particles are produced.

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging ˜0.2-0.5 eV. The energy separation depends on the barrier thickness (˜0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging ˜0.2-0.5 eV. The energy separation depends on the barrier thickness (˜0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

The present application discloses a display panel and a display device. The display panel includes a substrate; an active switch, which is arrange on the substrate and includes a first active switch and a second active switch; a pixel, which is arrange on the substrate and coupled to the first active switch and includes a quantum dot light-emitting diode; and a light sensor, which is arrange on the substrate and coupled to the second active switch and includes a quantum dot light sensing layer.

The present invention relates to a method for manufacturing a photovoltaic device comprising: forming a porous first conducting layer on one side of a porous insulating substrate, coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, performing a first heat treatment of the structure to bond the grains to the first conducting layer, forming electrically insulating layers on surfaces of the first conducting layer, forming a second conducting layer on an opposite side of the porous insulating substrate, applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and electrically connecting the charge conducting material to the second conducting layer.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.