Patent classifications
H01L31/0392
Back contact solar cell string and preparation method therefor, module, and sytsem
A back contact solar cell string includes at least two cell pieces, each cell piece including P-type doped regions and N-type doped regions that are alternately arranged, the P-type doped regions including positive electrode thin grid lines, and the N-type doped regions including negative electrode thin grid lines; and a plurality of conductive wires connected to the positive electrode thin grid lines and the negative electrode thin grid lines. The conductive regions configured for electrical connection between each conductive wire and the positive electrode thin grid lines or the negative electrode thin grid lines and insulation regions configured for insulating connection between each conductive wire and the negative electrode thin grid lines or the positive electrode thin grid lines are alternately disposed at joints between each conductive wire and the positive electrode thin grid lines, and at joints between each conductive wire and the negative electrode thin grid lines.
Back contact solar cell string and preparation method therefor, module, and sytsem
A back contact solar cell string includes at least two cell pieces, each cell piece including P-type doped regions and N-type doped regions that are alternately arranged, the P-type doped regions including positive electrode thin grid lines, and the N-type doped regions including negative electrode thin grid lines; and a plurality of conductive wires connected to the positive electrode thin grid lines and the negative electrode thin grid lines. The conductive regions configured for electrical connection between each conductive wire and the positive electrode thin grid lines or the negative electrode thin grid lines and insulation regions configured for insulating connection between each conductive wire and the negative electrode thin grid lines or the positive electrode thin grid lines are alternately disposed at joints between each conductive wire and the positive electrode thin grid lines, and at joints between each conductive wire and the negative electrode thin grid lines.
Application of Electrical Conductors of a Solar Cell
A method is disclosed for applying an electrical conductor to a solar cell, which comprises providing a flexible membrane with a pattern of groove formed on a first surface thereof, and loading the grooves with a composition comprising conductive particles. The composition is, or may be made, electrically conductive. Once the membrane is loaded, the grooved first surface of the membrane is brought into contact with a front or/and back of a solar cell. A pressure is then applied between the solar cell and the membrane(s) so that the composition loaded to the grooves adheres to the solar cell. The membrane(s) and the solar cell are separated and the composition in the groove is left on the solar cell surface. The electrically conductive particles in the composition are then sintered or otherwise fused to form a pattern of electrical conductor on the solar cell, the pattern corresponding to the pattern formed in the membrane(s).
Hybrid structure using graphene-carbon nanotube and perovskite solar cell using the same
Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.
Hybrid structure using graphene-carbon nanotube and perovskite solar cell using the same
Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.
Imaging in curved arrays: methods to produce free-formed curved detectors
A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount or substrate attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing a decreased radius of curvature (more severe curving) as compared to without the distribution.
HETEROEPITAXIAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A HETEROEPITAXIAL SEMICONDUCTOR DEVICE
A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.
HETEROEPITAXIAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A HETEROEPITAXIAL SEMICONDUCTOR DEVICE
A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.
Substrate for solar cell and manufacturing method thereof
Disclosed are a substrate for a solar cell and a method for manufacturing the same. The method include putting negative and positive electrodes facing away from each other into suspension in which at least two different types of negatively charged cellulose nanofibers are dispersed; applying a voltage across the positive and negative electrodes such that the cellulose fibers are adsorbed onto a surface of the negative electrode; and drying the negative electrode having the cellulose fibers adsorbed thereon.
Low-reflection film-coated transparent substrate, photoelectric conversion device, coating liquid for forming low-reflection film of low-reflection film-coated transparent substrate, and method for producing low-reflection film-coated transparent substrate
A low-reflection film-coated transparent substrate of the present invention includes a transparent substrate and a low-reflection film formed on at least one principal surface of the transparent substrate. The low-reflection film is a porous film including: fine silica particles being solid and spherical and having an average particle diameter of 80 to 150 nm; and a binder containing silica as a main component, the fine silica particles being bound by the binder. The binder further contains an aluminum compound. The low-reflection film contains as components: 55 to 70 mass % of the fine silica particles; 25 to 40 mass % of the silica of the binder; 0.1 to 1.5 mass % of the aluminum compound in terms of Al.sub.2O.sub.3; and 0.25 to 3% of an organic component. The low-reflection film has a thickness of 80 to 800 nm. A transmittance gain is 2.5% or more, the transmittance gain being defined as an increase of average transmittance of the low-reflection film-coated transparent substrate in a wavelength range of 380 to 850 nm relative to average transmittance of the transparent substrate uncoated with the low-reflection film in the wavelength range. The organic component includes at least one selected from the group consisting of a ß-ketoester and a ß-diketone.