An ICIP comprises: a number N.sub.s of IC stages, wherein N.sub.s is configured to achieve a fundamental limit of the detectivity D.sub.peak* the ICIP within a range, and wherein each of the IC stages comprises: a hole barrier; an absorber coupled to the hole barrier and comprising a thickness d, wherein d is configured to achieve D.sub.peak* within the range; and an electron barrier coupled to the absorber. A method of manufacturing an ICIP comprises: determining a number N.sub.s of IC stages of the ICIP, wherein N.sub.s is configured to achieve a peak detectivity D.sub.peak* of the ICIP within a range; determining a thickness d of an absorber, wherein d is configured to achieve D.sub.peak* within the range; obtaining a substrate; forming an electron barrier on the substrate, the absorber having d on the electron barrier, and a hole barrier on the absorber; and repeating the forming N.sub.s times.

The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.

The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.

A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.

A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

An example short-wave infrared imaging device includes: a detector to detect light representing an object to be imaged, the detector comprising a semiconductor wafer divided into an array of detector cells; and an image processor coupled to the detector to generate image data based on the reflected light detected at the detector; and wherein each detector cell comprises: a detection region of the semiconductor wafer; a dopant doped into the wafer in a sub-cell pattern having at least two spaced apart doped regions, the dopant to generate a signal based on light received in the detection region of the detector cell; a metal contact joining the at least two doped regions; and a signal processing circuit coupled to the metal contact to transmit the signal to the image processor.

A light-receiving element, comprising a plurality of photodiodes formed by stacking in this sequence, a lower reflection mirror, a resonator including a photoelectric conversion layer, and an upper reflection mirror on a semiconductor substrate, wherein the plurality of photodiodes share the semiconductor substrate and the lower reflection mirror, the plurality of photodiodes includes a first photodiode having a resonance wavelength λ1 and a second photodiode having a resonance wavelength λ2 that is larger than the resonance wavelength λ1, and a reflectance of the lower reflection mirror has a first peak corresponding to the resonance wavelength λ1 and a second peak corresponding to the resonance wavelength λ2.

Methods, apparatus and systems are described that relate to uncooled long-wave infrared (LWIR) photodetectors capable of operating at room temperature and having a simple structure that can be manufactured at low cost. One example LWIR photodetector includes a layer of amorphous silicon (a-Si) disposed on a silicon substrate and a layer of amorphous germanium (a-Ge) disposed on the a-Si layer, wherein the a-Ge layer is operable to absorb infrared light and provide photoconductive gain, and the a-Si layer is operable to produce carrier multiplication via cycling excitation process.

Methods, apparatus and systems are described that relate to uncooled long-wave infrared (LWIR) photodetectors capable of operating at room temperature and having a simple structure that can be manufactured at low cost. One example LWIR photodetector includes a layer of amorphous silicon (a-Si) disposed on a silicon substrate and a layer of amorphous germanium (a-Ge) disposed on the a-Si layer, wherein the a-Ge layer is operable to absorb infrared light and provide photoconductive gain, and the a-Si layer is operable to produce carrier multiplication via cycling excitation process.