In an illuminance sensor, a slow axis of a first portion comprises a relation of +45° or -45° in regard to a first polarization direction that is a polarization direction of the a linear polarization plate, a relation of a slow axis of a second portion in regard to the first polarization direction is -45° or +45° that is opposite in sign to the relation of the slow axis of the first portion in regard to the first polarization direction, and a slow axis of a second quarter-wave plate comprises a relation of +45° or -45° in regard to a second polarization direction that is a polarization direction of a second linear polarization plate, wherein the relation of the slow axis of the second quarter-wave plate in regard to the second polarization direction is the same with the relation of the slow axis of the first portion in regard to the first polarization direction.

In an illuminance sensor, a slow axis of a first portion comprises a relation of +45° or -45° in regard to a first polarization direction that is a polarization direction of the a linear polarization plate, a relation of a slow axis of a second portion in regard to the first polarization direction is -45° or +45° that is opposite in sign to the relation of the slow axis of the first portion in regard to the first polarization direction, and a slow axis of a second quarter-wave plate comprises a relation of +45° or -45° in regard to a second polarization direction that is a polarization direction of a second linear polarization plate, wherein the relation of the slow axis of the second quarter-wave plate in regard to the second polarization direction is the same with the relation of the slow axis of the first portion in regard to the first polarization direction.

The present disclosure describes an embodiment of a thin film transistor based light sensor circuit. The thin film transistor based light sensor circuit includes two thin film transistors, in which a channel region of one of the thin film transistors includes a light sensing area and a channel region of the other thin film transistor has a capping material disposed thereon. The thin film transistor based light sensor circuit further includes a comparator device electrically coupled to the two thin film transistors and configured to detect a current difference between the thin film transistors in response to the thin film transistor with the channel region having the light sensing area being exposed to light.

The present disclosure describes an embodiment of a thin film transistor based light sensor circuit. The thin film transistor based light sensor circuit includes two thin film transistors, in which a channel region of one of the thin film transistors includes a light sensing area and a channel region of the other thin film transistor has a capping material disposed thereon. The thin film transistor based light sensor circuit further includes a comparator device electrically coupled to the two thin film transistors and configured to detect a current difference between the thin film transistors in response to the thin film transistor with the channel region having the light sensing area being exposed to light.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

An infrared (IR) detection sensor for detecting IR radiation. The IR detection sensor including a plurality of nanowires positioned adjacent to each other so as to define a layer. The layer has an outer surface directable towards a source of IR radiation. First and second terminals are electrically coupled to the layer and a circuit is electrically coupled to the first and second terminals. The circuit is configured to determine a value of an electrical property, such as the resistance, of the layer in response to the IR radiation absorbed by the layer.

An infrared (IR) detection sensor for detecting IR radiation. The IR detection sensor including a plurality of nanowires positioned adjacent to each other so as to define a layer. The layer has an outer surface directable towards a source of IR radiation. First and second terminals are electrically coupled to the layer and a circuit is electrically coupled to the first and second terminals. The circuit is configured to determine a value of an electrical property, such as the resistance, of the layer in response to the IR radiation absorbed by the layer.

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

This application discloses a LiDAR adjustment method, circuit, and apparatus, a LiDAR, and a storage medium. The method is applied to the LiDAR having a photoelectric sensor, and the method includes: obtaining an operating temperature of the photoelectric sensor; determining a target bias voltage based on the operating temperature, where the target bias voltage is a difference between voltages applied to a cathode and an anode of the photoelectric sensor; and based on the target bias voltage, adjusting the voltages applied to at least one of the anode and the cathode of the photoelectric sensor.