Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity. A thickness the scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.

A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity. A thickness the scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.

Disclosed is an x-ray detector includes a first electrode formed on a substrate, a photoconductive layer formed on the first electrode, a second electrode formed on the photoconductive layer and configured to be in a voltage applied state with a bias voltage or a floating state, and a power supply circuit configured to control an output of the bias voltage to be on/off.

Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

The invention relates to an X-ray detector device (10) for detection of X-ray radiation at an inclined angle relative to the X-ray radiation, an X-ray imaging system (1), an X-ray imaging method, and a computer program element for controlling such device or system for performing such method and a computer readable medium having stored such computer program element. The X-ray detector device (10) comprises a cathode surface (11) and an anode surface (12). The cathode surface (11) and the anode surface (12) are displaced by a separation layer (13) allowing charge transport (T) between the cathode surface (11) and the anode surface (12) in response to X-ray radiation incident during operation on the cathode surface (11). The anode surface (12) is segmented into anode pixels (121) and the cathode surface (11) is segmented into cathode pixels (111). At least one of the cathode pixels (111) is assigned to at least one of the anode pixels (121) in a coupling direction (C) inclined relative to the cathode surface (11). At least one of the cathode pixels (111) is configured to be at a voltage offset relative to an adjacent cathode pixel and at least one of the anode pixels (121) is configured to be at a voltage offset relative to an adjacent anode pixel (121). The voltage offset is configured to converge the charge transport (T) in a direction parallel to the coupling direction (C).

The invention relates to an X-ray detector device (10) for detection of X-ray radiation at an inclined angle relative to the X-ray radiation, an X-ray imaging system (1), an X-ray imaging method, and a computer program element for controlling such device or system for performing such method and a computer readable medium having stored such computer program element. The X-ray detector device (10) comprises a cathode surface (11) and an anode surface (12). The cathode surface (11) and the anode surface (12) are displaced by a separation layer (13) allowing charge transport (T) between the cathode surface (11) and the anode surface (12) in response to X-ray radiation incident during operation on the cathode surface (11). The anode surface (12) is segmented into anode pixels (121) and the cathode surface (11) is segmented into cathode pixels (111). At least one of the cathode pixels (111) is assigned to at least one of the anode pixels (121) in a coupling direction (C) inclined relative to the cathode surface (11). At least one of the cathode pixels (111) is configured to be at a voltage offset relative to an adjacent cathode pixel and at least one of the anode pixels (121) is configured to be at a voltage offset relative to an adjacent anode pixel (121). The voltage offset is configured to converge the charge transport (T) in a direction parallel to the coupling direction (C).