H01L31/145

Photodetector including a Geiger mode avalanche photodiode and an integrated resistor and related manufacturing method

A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

LIGHT-OUTPUT-POWER SELF-AWARENESS LIGHT-EMITTING DEVICE
20200194610 · 2020-06-18 ·

A light emitting device includes an n-type AlGaN structure, a p-type AlGaN structure, and a light-emitting active-region sandwiched between the n-type AlGaN structure and the p-type AlGaN structure. A first p-contact is formed on the p-type AlGaN structure defining a light-emitting structure, a second p-contact is formed on the p-type AlGaN structure defining a light-detecting structure, and an n-contact is formed on the n-type AlGaN structure serving as a common cathode for the light-emitting structure and the light-detecting structure. There is a bridge zone between the first and the second p-contacts and the p-type AlGaN structure in the bridge zone is not removed.

Bio-information detecting sensor

A bio-information detecting sensor according to an embodiment of the present invention includes a flexible substrate, light emitting parts disposed on the flexible substrate, and a light receiving part disposed on the flexible substrate and having a donut shape surrounding the light emitting parts.

DISPLAY DEVICE AND METHOD FOR AUTOMATICALLY REGULATING SCREEN BRIGHTNESS OF THE SAME
20200082789 · 2020-03-12 ·

A display device, including a control assembly, a display panel having a display area and a non-display area, a first switch optical sensor disposed at the display area, and a second switch optical sensor disposed at the non-display area.

DISPLAY PANEL, DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY PANEL

The present disclosure provides a display panel, a display device and manufacturing method of the display panel. The display panel includes a display area and a peripheral area located at a periphery of the display area, a light transmittance region is provided in the peripheral region; at least one first sub-pixels is provided at positions corresponding to the light transmittance regions, wherein at least one of the first sub-pixels is provided with a first thin film transistor, the first thin film transistor is connected with the first gate line, the first data line, and the first pixel electrode, wherein the first gate line is floating; a first pixel electrode is disposed in at least one of the first sub-pixels; and at least one first sensing electrode has an orthogonal projection on a base substrate partially overlapped with an orthogonal projection of the at least one first sub-pixel.

HIGH SENSITIVITY OPTOELECTRONIC DEVICE FOR DETECTING CHEMICAL SPECIES AND RELATED MANUFACTURING METHOD

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

PHOTODETECTOR INCLUDING A GEIGER MODE AVALANCHE PHOTODIODE AND AN INTEGRATED RESISTOR AND RELATED MANUFACTURING METHOD
20190319158 · 2019-10-17 ·

A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

BIO-INFORMATION DETECTING SENSOR

A bio-information detecting sensor according to an embodiment of the present invention includes a flexible substrate, light emitting parts disposed on the flexible substrate, and a light receiving part disposed on the flexible substrate and having a donut shape surrounding the light emitting parts.

LIGHT RECEIVING ELEMENT, OPTICAL COMMUNICATION DEVICE, AND METHOD FOR MANUFACTURING A LIGHT RECEIVING ELEMENT
20190198700 · 2019-06-27 · ·

A light receiving element (1) according to an embodiment of the disclosure includes a semiconductor layer (20) in which a photodiode having a PIN structure is provided in a mesa portion having a pillar shape. The photodiode includes a first conductive layer (21), an optical absorption layer (23), and a second conductive layer (24) having a light incident surface. In the light receiving element (1), the semiconductor layer (20) includes, in the vicinity of an interface between the first conductive layer (21) and the optical absorption layer (23), a constricted portion (26) that is the most constricted of the first conductive layer (21). The interface has an end exposed on an internal surface of the constricted portion (26).

OPTICAL MODULE
20190097735 · 2019-03-28 ·

An optical module includes a housing having an upper cover and a lower cover; a substrate having a circuit device mounted on its first surface; a heat dissipation member configured to be in contact with the circuit device mounted on the substrate; and at least one inner case having stiffness, wherein the upper cover is disposed facing the first surface of the substrate, and the lower cover is disposed facing a second surface of the substrate, and the inner case is disposed so as to press the substrate from the second surface of the substrate toward the upper cover.