The present technology relates to an optical module capable of improving performance of the optical module including a light emitting element and a light receiving element.

An optical module includes: a substrate; a light emitting element that is disposed on the substrate; a light receiving element that is disposed on the substrate at a predetermined interval from the light emitting element; a first casing that is disposed on the substrate and surrounds a periphery of the light emitting element; a second casing that is disposed on the substrate and surrounds a periphery of the light receiving element; a light emitting lens that is housed in the first casing and is disposed on an optical axis of the light emitting element; and a light receiving lens that is housed in the second casing and is disposed on an optical axis of the light receiving element, in which a first diameter of one lens out of the light emitting lens and the light receiving lens in a first direction toward an optical axis of the other lens with reference to an optical axis of the one lens is shorter than a second diameter of the one lens in a second direction that is orthogonal to the first direction. The present technology can be applied to a distance measuring sensor, for example.

A rotation angle encoder apparatus is disclosed. The rotation angle encoder apparatus may comprise a plurality of light sources, a plurality of light detectors, and a plurality of pinions rotatable about a shaft. Each of the pinions may comprises a plurality of teeth and a plurality of gaps. The rotation angle encoder apparatus may comprise a plurality of stacked configurations such that, when the shaft is rotated, transmissivity may be measured to determine or calculate at least one measurement, such as an angle of rotation, position, movement, distance, or other discernable measurement. The rotation angle encoder apparatus with a plurality pinions and associated measurable transmissivities may enable an optical spectrum analyzer to increase wavelength accuracy and improve resolution in optical measurements.

A pair of optical components is used in an isolator that enables electric isolation. Each of the optical components includes: first lens portions arranged on different optical paths and transmitting light in a first direction; second lens portions arranged on different optical paths and transmitting light in the second direction orthogonal to the first direction; and a reflection portion reflecting, in the second direction, the light in the first direction transmitted through the first lens portion and guiding the light to the second lens portion, or reflecting, in the first direction, the light in the second direction transmitted through the second lens portion and guiding the light to the first lens portion The second lens portion included in one of the pair of optical components and the second lens portion included in the other optical component are spaced apart from each other and face each other.

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

Disclosed herein is an electronic device having a substrate, and an integrated circuit disposed within the substrate and having a top surface. The integrated circuit may be a laser emitting integrated circuit or a reflected light detector. A first interconnect layer is formed on the top surface of the substrate. A first optically transparent layer is formed on the top surface of the substrate and covering the top surface of the integrated circuit. A second interconnect layer is formed on a top surface of the first optically transparent layer. The second interconnect layer is patterned so as to not obstruct light traveling to or from the top surface of the integrated circuit through the first optically transparent layer.

Disclosed herein is an electronic device having a substrate, and an integrated circuit disposed within the substrate and having a top surface. The integrated circuit may be a laser emitting integrated circuit or a reflected light detector. A first interconnect layer is formed on the top surface of the substrate. A first optically transparent layer is formed on the top surface of the substrate and covering the top surface of the integrated circuit. A second interconnect layer is formed on a top surface of the first optically transparent layer. The second interconnect layer is patterned so as to not obstruct light traveling to or from the top surface of the integrated circuit through the first optically transparent layer.

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.