A light emitting device includes: a first light emitting element having a light emitting surface; an optical member having a lower surface, a first reflecting surface inclined to the lower surface, transmitting part of a first light emitted from the light emitting surface, and reflecting the rest upward, and a second reflecting surface located farther from the light emitting surface than the first reflecting surface and reflecting part or all of the first light passing through the first reflecting surface; and a photodetector located below the optical member and having a top surface provided with one or a plurality of light receiving regions including a first light receiving region configured to receive the first light reflected by the second reflecting surface. In a top view, part or all of the first light receiving region overlaps part or all of the first reflecting surface.

Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

The present technology relates to a light receiving device and a distance measurement system that enable light to be surely received by a reference pixel. A light receiving device includes a plurality of pixels each including a light receiving element having a light receiving surface, and a light emission source provided on an opposite side of the light receiving surface with respect to the light receiving element. The plurality of pixels includes a first pixel including a light shielding member provided between the light receiving element and the light emission source, and a second pixel including a light guiding unit that is configured to propagate a photon and is provided between the light receiving element and the light emission source. The present technology can be applied to a distance measurement system or the like that detects a distance to a subject in a depth direction, for example, for example.

An optical proximity sensor arrangement comprises a semiconductor substrate (100) with a main surface (101). A first integrated circuit (200) comprises at least one light sensitive component (201). The first integrated circuit is arranged on the substrate at or near the main surface. A second integrated circuit (300) comprises at least one light emitting component (301), and is arranged on the substrate at or near the main surface. A light barrier (400) is arranged between the first and second integrated circuits. The light barrier being designed to block light to be emitted by the at least one light emitting component from directly reaching the at least one light sensitive component. A multilayer mask (500) is arranged on or near the first integrated circuit and comprising a stack (501) of a first layer (502) of first elongated light blocking slats (503) and at least one second layer (504) of second elongated light blocking slats (505). The light blocking slats are arranged in the mask to block light, incident on the mask from a first region of incidence (701), and to pass light, incident on the mask from a second region of incidence (702), from reaching the at least one light sensitive component.

An optical proximity sensor arrangement comprises a semiconductor substrate (100) with a main surface (101). A first integrated circuit (200) comprises at least one light sensitive component (201). The first integrated circuit is arranged on the substrate at or near the main surface. A second integrated circuit (300) comprises at least one light emitting component (301), and is arranged on the substrate at or near the main surface. A light barrier (400) is arranged between the first and second integrated circuits. The light barrier being designed to block light to be emitted by the at least one light emitting component from directly reaching the at least one light sensitive component. A multilayer mask (500) is arranged on or near the first integrated circuit and comprising a stack (501) of a first layer (502) of first elongated light blocking slats (503) and at least one second layer (504) of second elongated light blocking slats (505). The light blocking slats are arranged in the mask to block light, incident on the mask from a first region of incidence (701), and to pass light, incident on the mask from a second region of incidence (702), from reaching the at least one light sensitive component.

A semiconductor module includes a light emitting element, a semiconductor element including a light receptor circuit disposed to receive light from the light emitting element, a light-transmissive insulating body disposed between the light emitting element and the semiconductor element, at least one of a first surface thereof facing the semiconductor element and a second surface thereof facing the light emitting element including a ragged region, a first light-transmissive bonding resin formed between the light emitting element and the light-transmissive insulating body, and a second light-transmissive bonding resin formed between the semiconductor element and the light-transmissive insulating body.

A signal coupling device includes a first element to output a signal, and a second element to receive the signal. A first silicone gel covers the first element. A second silicone gel covers the second element. A stacked body comprising at least one of an insulated coil or a capacitor is provided. The first element, the second element, and the stacked body are encapsulated in resin material, which contacts the first and second silicone gels.

A signal coupling device includes a first element to output a signal, and a second element to receive the signal. A first silicone gel covers the first element. A second silicone gel covers the second element. A stacked body comprising at least one of an insulated coil or a capacitor is provided. The first element, the second element, and the stacked body are encapsulated in resin material, which contacts the first and second silicone gels.

The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region (3) embedded between two layer sequences (1, 2) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences (1, 2). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.