A photovoltaic cell can include a dopant in contact with a semiconductor layer.

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

The present disclosure provides an optoelectronic sensor and a manufacturing method thereof, and an optoelectronic device and a manufacturing method thereof. The optoelectronic sensor includes a first electrode, a first semiconductor layer, a second semiconductor layer and a second electrode arranged in a stack, wherein each of the first semiconductor layer and the second semiconductor layer is a metal oxide semiconductor layer, the first electrode is a transparent electrode and has a work function greater than that of the first semiconductor layer; and the first semiconductor layer has a conductivity smaller than that of the second semiconductor layer, and has a work function greater than that of the second semiconductor layer.

A method for annealing an absorber layer is disclosed, the method including contacting a surface of the absorber layer with an annealing material provided as a gel. The annealing material comprises cadmium chloride and a thickening agent. A viscosity of the gel of the annealing material is greater than or equal to 5 millipascal seconds.

An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg.sub.1-xCd.sub.xTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.

According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.

A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

Provided is a radiation detecting element that has high adhesion between electrode portions and a substrate and does not suffer from performance failures due to insufficient insulation between the electrode portions, even if a distance between the electrode portions is narrower in order to obtain a high-definition radiation drawn image. The radiation detecting element includes: a plurality of electrode portions; and an insulating portion provided between the electrode portions on a surface of a substrate made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein tellurium oxide is present on an upper portion of the insulating portion, and the tellurium oxide on the upper portion of the insulating portion has a maximum thickness of 30 nm or less.

A photovoltaic cell can include a dopant in contact with a semiconductor layer.