An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

A heterogeneous semiconductor structure, including a first integrated circuit and a second integrated circuit, the second integrated circuit being a photonic integrated circuit. The heterogeneous semiconductor structure may be fabricated by bonding a multi-layer source die, in a flip-chip manner, to the first integrated circuit, removing the substrate of the source die, and fabricating one or more components on the source die, using etch and/or deposition processes, to form the second integrated circuit. The second integrated circuit may include components fabricated from cubic phase gallium nitride compounds, and configured to operate at wavelengths shorter than 450 nm.

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10.sup.19 cm.sup.3.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.

A member is provided which includes a silicon base substrate layer, a transition layer arranged over the silicon base substrate layer, and a gallium nitride (GaN) buffer layer arranged over the transition layer. The member further includes a gallium oxide layer. The member is beneficial for co-integration of ultra-wide-bandgap technology with wide bandgap technology, such as by using the gallium oxide layer with the gallium nitride buffer layer on cheap silicon substrates, such as the silicon base substrate layer. Therefore, the member provides access to establish the gallium nitride buffer layer (or gallium nitride) on the silicon base substrate layer (or silicon production lines) with improved thermal conductivity and higher electrical performance.

The invention provides a laser rapid fabrication method for flexible gallium nitride (GaN) photodetector which comprises the following steps: (1) bonding a flexible substrate to a GaN epitaxial wafer; (2) adjusting the focal plane position of a light beam, and ensuring that the light beam is incident from the side of a GaN epitaxial wafer substrate; (3) enabling the light beam to perform scanning irradiation from the edge of a sample structure obtained in the step (1); (4) adjusting the process parameters, and scanning irradiation in the reverse direction along the path in the step (3); (5) remove the original rigid transparent substrate of the epitaxial wafer to obtain a Ga metal nanoparticle/GaN film/flexible substrate structure; and (6) preparing interdigital electrodes on the surfaces of the Ga metal nanoparticles obtained in the step (5). The flexible GaN photodetector with Ga metal nanoparticle in-situ distribution detection surface is prepared in one step through laser technology, the process is simplified, meanwhile, the surface of the detector is induced to form the surface plasmon resonance effect, the light absorption and light response performance is greatly enhanced, and the flexible gallium nitride photodetector is suitable for industrial production.

The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.