The present disclosure provides a method for rapidly treating a heterojunction solar cell fabricated using a crystalline silicon wafer doped exclusively with n-type dopants to improve surface passivation and carrier transport properties using the following steps: providing a heterojunction solar cell; the solar cell having an n-type silicon substrate exclusively doped with n-type dopants with a concentration higher than 1×10.sup.14 cm.sup.−3 and a plurality of metallic contacts; illuminating a surface portion of the solar cell for a period of less than 5 minutes and at a temperature between 200° C. and 300° C. with light having an intensity of at least 2 kW/m.sup.2 and a wavelength such that the light is absorbed by the surface portion and generates electron-hole pairs in the solar cell. The step of illuminating a surface portion of the solar cell is such that less than 0.5 kWh/m.sup.2 of energy is transferred to the surface portion and a temperature of the surface portion increases at a rate of at least 10° C./s for a period of time during illumination.

Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×10.sup.21/cm.sup.3 to 2.5×10.sup.22/cm.sup.3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.

An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.

The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell.

A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer Si.sub.uN.sub.v (1<u/v<4) disposed on a rear surface of the substrate. The at least one silicon nitride layer has a refractive index and a thickness in respective ranges of 1.9 to 2.5 and 50 nm to 100 nm. The second passivation layer includes at least one aluminum oxide layer Al.sub.xO.sub.y (0.8<y/x<1.6), a refractive index and a thickness of which are respectively in ranges of 1.4 to 1.6 and 4 nm to 20 nm. The PPW layer includes at least one silicon oxynitride layer Si.sub.rO.sub.sN.sub.t (r>s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.

Provided, according to the present invention, is a solar cell module having excellent visibility, the solar cell module comprising: a transparent substrate; and a solar cell which is installed inside the transparent substrate and converts sunlight into photoelectricity, wherein the solar cell is installed so as to be horizontally arrayed in the transparent substrate.

PolySi:Ga/SiO.sub.2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.

The present disclosure provides a solar cell, a method for preparing the solar cell, and a photovoltaic module. The solar cell includes: a substrate having a first surface; a tunnelling oxide layer, a doped conductive layer and a first passivation layer that are formed over the first surface of the substrate sequentially in a direction away from the substrate; a first metal electrode and a second metal electrode, where the first metal electrode penetrates through the first passivation layer to be electrically connected to the doped conductive layer, the second metal electrode is connected to a surface of the first metal electrode facing toward the substrate, the second metal electrode penetrates through the tunnelling oxide layer to be in contact with the substrate; a local doped region, where the local doped region is located in the substrate, and covers the second metal electrode located in the substrate.

Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×10.sup.21/cm.sup.3 to 2.5×10.sup.22/cm.sup.3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.

The present disclosure provides a solar cell and a method for producing same. The solar cell includes: a substrate; a first passivation film, an anti-reflection layer and at least one first electrode formed on a front surface of the substrate; and a tunneling layer, a field passivation layer and at least one second electrode formed on a rear surface. The field passivation layer includes a first field passivation sub-layer and a second field passivation sub-layer; a conductivity of the first field passivation sub-layer is greater than a conductivity of the second field passivation sub-layer, and a thickness of the second field passivation sub-layer is smaller than a thickness of the first field passivation sub-layer; either the at least one first electrode or the at least one second electrode includes a silver electrode, a conductive adhesive and an electrode film that are sequentially formed in a direction away from the substrate.