The present invention provides an etching liquid which has a suitable etching rate for etching of an oxide containing zinc and tin and is suppressed in change of the etching rate due to dissolution of the oxide, while being free from the generation of a precipitate. The corrosiveness of this etching liquid to wiring materials is low enough to be ignored, and this etching liquid has excellent linearity of a pattern shape. The present invention uses an etching liquid which contains (A) one or more substances selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, methanesulfonic acid, perchloric acid and salts of these acids, and (B) oxalic acid or a salt thereof and water, and which has a pH of from −1 to 1.

A photodetector based on PtSe.sub.2 and a silicon nanopillar array includes a PMMA light-transmitting protective layer, a graphene transparent top electrode, a silicon nanopillar array structure coated with few-layer PtSe.sub.2, and metal electrodes of the graphene transparent top electrode and the silicon nanopillar array structure. A method for preparing the photodetector includes steps of: preparing graphene with a CVD method; preparing a silicon nanopillar array structure through dry etching; coating few-layer PtSe.sub.2 on surfaces of the silicon nano-pillar array structure through laser interference enhanced induction CVD; preparing graphene transparent top electrode; and magnetron-sputtering metal electrodes. The photodetector prepared by the present invention has a detection range from visible light to near-infrared wavebands. The silicon nanopillar array structure enhances light absorption of the detector, so that the detector has high sensitivity, simple structure and strong practicability.

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

A touch panel and a method of fabricating the same are provided. The touch panel may include: a substrate; first sensing electrodes disposed on a first surface and arranged along a first direction and second sensing electrodes arranged along a second direction; at least one first connector connecting the first sensing electrodes in the first direction; a first insulating layer pattern disposed on the first connector; at least one second connector disposed on the first insulating layer pattern, intersecting the first connector, and connecting the second sensing electrodes in the second direction; and wires disposed on the first surface of the substrate in the peripheral area and electrically connected to the first sensing electrodes and the second sensing electrodes. The first connector includes a first light-transmitting conductive pattern disposed on the first surface of the substrate and a first light-blocking conductive pattern disposed on the first light-transmitting conductive pattern.

A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

The present disclosure provides a contact structure and an electronic device having the same. The contact structure includes a substrate, a copper layer, an organic composite protective layer, and a silver nanowire layer. The copper layer is disposed on the substrate. The nanowire-distribution-promotion layer is disposed between the copper layer and the silver nanowire layer.

The invention concerns a method of manufacturing a photovoltaic module comprising at least two electrically connected photovoltaic cells, each photovoltaic cell (4.sub.i) being multi-layered structure disposed on a substrate (6) having down-web direction (X) and a cross-web direction (Y). The method comprises providing a plurality of spaced-apart first electrode strips (8.sub.i) over the substrate (6), each first electrode strip extending along the cross-web direction (Y), and providing, over the first electrode strips layer, at least one insulating strip (14a, 14b) of an insulator material extending along the down-web direction (X), each insulating strip defining a connecting area and an active area. A functional stack (20) comprising a full web coated layer of photoactive semiconductor material is formed over the first layer and within the active area. A plurality of spaced-apart second electrode strips (28.sub.i) are provided within the active area, each second electrode strip extending along the cross-web direction (Y), so as to form photovoltaic cells and a photovoltaic module is formed by electrically connecting at least two adjacent photovoltaic cells, by extending over the insulating strips (14a, 14b) electrical connection patterns to electrically connect, within the connecting area(s), the second electrode strip of an photovoltaic cell to the first electrode strip of an adjacent photovoltaic cell.

The present disclosure provides a contact structure and an electronic device having the same. The contact structure includes: a substrate; a copper layer disposed on the substrate; an adhesion promotion layer disposed on the copper layer, wherein the adhesion promotion layer forms a monomolecular adsorption layer on the surface of the copper layer; and a silver nanowire layer disposed on the adhesion promotion layer, and the adhesive force between the copper layer and the silver nanowire layer is 3B or more. In the present disclosure, by disposing the adhesion promotion layer on the copper layer, in the stacked structure of the copper layer and the silver nanowire layer, the adhesive force between the copper layer and the silver nanowire layer is increased, so as to prevent a peeling phenomenon of the copper layer occurring in the subsequent yellow-light process.

Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.

The present disclosure provides a thin-film photovoltaic cell with a high photoelectric conversion rate and a preparation process thereof. The thin-film photovoltaic cell comprises a transparent substrate and photovoltaic units which are disposed on the transparent substrate and arranged toward the display module, and the photovoltaic unit disposed in the display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a transparent back electrode disposed on the light absorption layer; and the photovoltaic unit disposed in the non-display area comprises a transparent front electrode disposed on the transparent substrate, a light absorption layer disposed on the transparent front electrode and a metal back electrode disposed on the light absorption layer.